The influence of Si-doping to the characteristics of AlGaInP/GaInP multiple quantum wells
AlGaInP/GaInP multiple quantum well structures were grown by low-pressure MOCVD on n-GaAs substrates. The influence of Si-doping to the characteristics of AlGaInP/GaInP multiple quantum wells was studied. The PL intensity from MQW with Si-doped barriers is about 13 times stronger than that of undope...
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Veröffentlicht in: | Physica. B, Condensed matter Condensed matter, 2004-06, Vol.349 (1), p.214-217 |
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Sprache: | eng |
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