The influence of Si-doping to the characteristics of AlGaInP/GaInP multiple quantum wells

AlGaInP/GaInP multiple quantum well structures were grown by low-pressure MOCVD on n-GaAs substrates. The influence of Si-doping to the characteristics of AlGaInP/GaInP multiple quantum wells was studied. The PL intensity from MQW with Si-doped barriers is about 13 times stronger than that of undope...

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Veröffentlicht in:	Physica. B, Condensed matter Condensed matter, 2004-06, Vol.349 (1), p.214-217
Hauptverfasser:	Shuti, Li, Guanghan, Fan, Tianming, Zhou, Hao, Wang, Huiqing, Sun, Shuwen, Zheng, Zhiyou, Guo, Chunhua, Tan
Format:	Artikel
Sprache:	eng
Schlagworte:	Exact sciences and technology Metalorganic chemical vapor deposition Optical microscopy Physics Quantum wells Semiconducting III–V materials X-ray diffraction
Online-Zugang:	Volltext
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Zusammenfassung:	AlGaInP/GaInP multiple quantum well structures were grown by low-pressure MOCVD on n-GaAs substrates. The influence of Si-doping to the characteristics of AlGaInP/GaInP multiple quantum wells was studied. The PL intensity from MQW with Si-doped barriers is about 13 times stronger than that of undoped MQW. The PL intensity from MQW with Si-doped barriers and wells is strong as 28 times as that of undoped MQW.
ISSN:	0921-4526 1873-2135
DOI:	10.1016/j.physb.2004.03.090