Thermal oxidation of indium and gallium sulphides

Thermal oxidation of indium and gallium sulphides

The paper illustrates thermal oxidation of InS and GaS. Both thermodynamic calculations and experimental results suggest the formation of a monophase oxide layer. Such oxidation processes are not typical for the other compounds in the III–VI system, where the native oxide film is another chalcogen c...

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Veröffentlicht in:Physica. B, Condensed matter Condensed matter, 2005-01, Vol.355 (1), p.365-369
Hauptverfasser: Balitskii, O.A., Savchyn, V.P., Savchyn, P.V.
Format: Artikel
Sprache:eng
Schlagworte:
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
GaS
III–VI compound
InS
Materials science
Oxidation
Physics
Surface treatments
Thermal oxidation
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Beschreibung
Zusammenfassung:The paper illustrates thermal oxidation of InS and GaS. Both thermodynamic calculations and experimental results suggest the formation of a monophase oxide layer. Such oxidation processes are not typical for the other compounds in the III–VI system, where the native oxide film is another chalcogen compound with a formula like ( A 2 III B 3 VI ) enriched.
ISSN:0921-4526
1873-2135
DOI:10.1016/j.physb.2004.11.033