Achieving Zero‐Temperature Coefficient Point Behavior by Defect Passivation for Temperature‐Immune Organic Field‐Effect Transistors

Organic field‐effect transistors (OFETs) have broad prospects in biomedical, sensor, and aerospace applications. However, obtaining temperature‐immune OFETs is difficult because the electrical properties of organic semiconductors (OSCs) are temperature‐sensitive. The zero‐temperature coefficient (ZTC) point behavior can be used to achieve a temperature‐immune output current; however, it is difficult to achieve in organic devices with thermal activation characteristics, according to the existing ZTC point theory. Here, the Fermi pinning in OSCs is eliminated using the defect passivation strategy, making the Fermi level closer to the tail state at low temperatures; thus threshold voltage (VT) is negatively correlated with temperature. ZTC point behaviors in OFETs are achieved by compensation between VT and mobility at different temperatures to improve its temperature immunity. A temperature‐immune output current can be realized in a variable‐temperature bias voltage test over 50000 s by biasing the device at the ZTC point. This study provides an effective solution for temperature‐immune OFETs and inspiration for their practical application. The zero‐temperature coefficient (ZTC) point behavior is first achieved by eliminating Fermi pinning using a defect passivation strategy, which complements the ZTC point theory and achieves temperature‐immune organic field‐effect transistors (OFETs). The temperature‐immune output current can be realized in the variable temperature bias voltage test over 50000 s by biasing OFETs at ZTC points.