The growth of SiGe quantum rings in Au thin films on epitaxial SiGe on silicon
Self-assembled SiGe quantum rings (QRs) on Si 0.8Ge 0.2 substrate has been formed by thermal annealing of the samples with capping Au thin films at 1100 °C in N 2 ambient. Miniature quantum rings have a narrow distribution of diameter and height of 27.9±1.7 and 1.53±0.10 nm, respectively. The format...
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Veröffentlicht in: | Thin solid films 2004-12, Vol.469 (Complete), p.478-482 |
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creator | He, J.H. Chueh, Y.L. Wu, W.W. Lee, S.W. Chen, L.J. Chou, L.J. |
description | Self-assembled SiGe quantum rings (QRs) on Si
0.8Ge
0.2 substrate has been formed by thermal annealing of the samples with capping Au thin films at 1100 °C in N
2 ambient. Miniature quantum rings have a narrow distribution of diameter and height of 27.9±1.7 and 1.53±0.10 nm, respectively. The formation of quantum rings was found to be mediated by the Au nanoparticles. As the size of Au nanoparticles can be adjusted, the method promises to be an effective technique to produce high density, uniform in size quantum rings. |
doi_str_mv | 10.1016/j.tsf.2004.06.179 |
format | Article |
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0.8Ge
0.2 substrate has been formed by thermal annealing of the samples with capping Au thin films at 1100 °C in N
2 ambient. Miniature quantum rings have a narrow distribution of diameter and height of 27.9±1.7 and 1.53±0.10 nm, respectively. The formation of quantum rings was found to be mediated by the Au nanoparticles. As the size of Au nanoparticles can be adjusted, the method promises to be an effective technique to produce high density, uniform in size quantum rings.</description><identifier>ISSN: 0040-6090</identifier><identifier>EISSN: 1879-2731</identifier><identifier>DOI: 10.1016/j.tsf.2004.06.179</identifier><language>eng</language><publisher>Elsevier B.V</publisher><subject>Nanorings ; Quantum rings ; Self-assembly ; SiGe</subject><ispartof>Thin solid films, 2004-12, Vol.469 (Complete), p.478-482</ispartof><rights>2004 Elsevier B.V.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c359t-7a138c415f6f18a6a58e86583b7b1ce4f1f4fe4dee522d434b70f260752be863</citedby><cites>FETCH-LOGICAL-c359t-7a138c415f6f18a6a58e86583b7b1ce4f1f4fe4dee522d434b70f260752be863</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.tsf.2004.06.179$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,778,782,3539,27913,27914,45984</link.rule.ids></links><search><creatorcontrib>He, J.H.</creatorcontrib><creatorcontrib>Chueh, Y.L.</creatorcontrib><creatorcontrib>Wu, W.W.</creatorcontrib><creatorcontrib>Lee, S.W.</creatorcontrib><creatorcontrib>Chen, L.J.</creatorcontrib><creatorcontrib>Chou, L.J.</creatorcontrib><title>The growth of SiGe quantum rings in Au thin films on epitaxial SiGe on silicon</title><title>Thin solid films</title><description>Self-assembled SiGe quantum rings (QRs) on Si
0.8Ge
0.2 substrate has been formed by thermal annealing of the samples with capping Au thin films at 1100 °C in N
2 ambient. Miniature quantum rings have a narrow distribution of diameter and height of 27.9±1.7 and 1.53±0.10 nm, respectively. The formation of quantum rings was found to be mediated by the Au nanoparticles. As the size of Au nanoparticles can be adjusted, the method promises to be an effective technique to produce high density, uniform in size quantum rings.</description><subject>Nanorings</subject><subject>Quantum rings</subject><subject>Self-assembly</subject><subject>SiGe</subject><issn>0040-6090</issn><issn>1879-2731</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2004</creationdate><recordtype>article</recordtype><recordid>eNqFkMtOwzAQRS0EEqXwAey8YpdgO46TiFVVQUGqYEH3luOMW1d5tLbD4-9xFdawutLMuSPNQeiWkpQSKu73afAmZYTwlIiUFtUZmtGyqBJWZPQczeKCJIJU5BJdeb8nhFDGshl63ewAb93wGXZ4MPjdrgAfR9WHscPO9luPbY8XIw67mMa2ncdDj-Fgg_qyqp0KceJta_XQX6MLo1oPN785R5unx83yOVm_rV6Wi3Wis7wKSaFoVmpOcyMMLZVQeQmlyMusLmqqgRtquAHeAOSMNTzjdUEME6TIWR3BbI7uprMHNxxH8EF21mtoW9XDMHrJKhGpiv0PlpxmoiQRpBOo3eC9AyMPznbKfUtK5Mmw3MtoWJ4MSyJkNBw7D1MH4qcfFpz02kKvobEOdJDNYP9o_wAgp4LQ</recordid><startdate>20041222</startdate><enddate>20041222</enddate><creator>He, J.H.</creator><creator>Chueh, Y.L.</creator><creator>Wu, W.W.</creator><creator>Lee, S.W.</creator><creator>Chen, L.J.</creator><creator>Chou, L.J.</creator><general>Elsevier B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope><scope>7TB</scope><scope>FR3</scope></search><sort><creationdate>20041222</creationdate><title>The growth of SiGe quantum rings in Au thin films on epitaxial SiGe on silicon</title><author>He, J.H. ; Chueh, Y.L. ; Wu, W.W. ; Lee, S.W. ; Chen, L.J. ; Chou, L.J.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c359t-7a138c415f6f18a6a58e86583b7b1ce4f1f4fe4dee522d434b70f260752be863</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2004</creationdate><topic>Nanorings</topic><topic>Quantum rings</topic><topic>Self-assembly</topic><topic>SiGe</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>He, J.H.</creatorcontrib><creatorcontrib>Chueh, Y.L.</creatorcontrib><creatorcontrib>Wu, W.W.</creatorcontrib><creatorcontrib>Lee, S.W.</creatorcontrib><creatorcontrib>Chen, L.J.</creatorcontrib><creatorcontrib>Chou, L.J.</creatorcontrib><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Mechanical & Transportation Engineering Abstracts</collection><collection>Engineering Research Database</collection><jtitle>Thin solid films</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>He, J.H.</au><au>Chueh, Y.L.</au><au>Wu, W.W.</au><au>Lee, S.W.</au><au>Chen, L.J.</au><au>Chou, L.J.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>The growth of SiGe quantum rings in Au thin films on epitaxial SiGe on silicon</atitle><jtitle>Thin solid films</jtitle><date>2004-12-22</date><risdate>2004</risdate><volume>469</volume><issue>Complete</issue><spage>478</spage><epage>482</epage><pages>478-482</pages><issn>0040-6090</issn><eissn>1879-2731</eissn><abstract>Self-assembled SiGe quantum rings (QRs) on Si
0.8Ge
0.2 substrate has been formed by thermal annealing of the samples with capping Au thin films at 1100 °C in N
2 ambient. Miniature quantum rings have a narrow distribution of diameter and height of 27.9±1.7 and 1.53±0.10 nm, respectively. The formation of quantum rings was found to be mediated by the Au nanoparticles. As the size of Au nanoparticles can be adjusted, the method promises to be an effective technique to produce high density, uniform in size quantum rings.</abstract><pub>Elsevier B.V</pub><doi>10.1016/j.tsf.2004.06.179</doi><tpages>5</tpages></addata></record> |
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subjects | Nanorings Quantum rings Self-assembly SiGe |
title | The growth of SiGe quantum rings in Au thin films on epitaxial SiGe on silicon |
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