Growth of conformal copper films on TaN by electrochemical deposition for ULSI interconnects

Seedless copper electrochemical deposition (ECD) becomes a potential interconnect technology while device dimension keeps shrinking in ULSI design. In seedless copper ECD on TaN, which is a widely used diffusion barrier, uniform growth of copper film on TaN is hindered because a robust native Ta2O5...

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Veröffentlicht in:	Surface & coatings technology 2006-12, Vol.201 (6), p.2712-2716
Hauptverfasser:	Kim, Sunjung, Duquette, David J.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Copper Exact sciences and technology Metallic coatings Metals. Metallurgy Production techniques Seedless electrodeposition Surface morphology Surface treatment Tantalum nitride Tantalum pentoxide Thin film growth
Online-Zugang:	Volltext
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