Growth of conformal copper films on TaN by electrochemical deposition for ULSI interconnects

Seedless copper electrochemical deposition (ECD) becomes a potential interconnect technology while device dimension keeps shrinking in ULSI design. In seedless copper ECD on TaN, which is a widely used diffusion barrier, uniform growth of copper film on TaN is hindered because a robust native Ta2O5 exists on TaN surface. Complete removal of the native Ta2O5 can be attained using a saturated KOH solution that is assisted by an anodic voltage. This then permits that copper film grows on the pretreated TaN surface in a copper–citrate (Cu–Cit) complex electrolyte. Its growing morphology and deposition rate are dependent on the etching depth of as-deposited TaN in the KOH solution. Even for a very short etching time of 0.8 s, thin Ta2O5 is totally etched off and the activated TaN surface appears. Thin and conformal copper films grown in a layer-by-layer mode on the TaN surface are proper to function as an ECD seed or metal lines for ULSI interconnects.