Structural and electrical properties of CuInSe2 ternary compound thin films

Process variables for manufacturing CuInSe2 thin films were established in order to clarify optimum conditions for growth of the thin film depending upon process conditions (substrate temperature, sputtering pressure, DC/RF power), and then by changing the number of vapor deposition conditions and a...

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Veröffentlicht in:	Physica status solidi. C 2006-09, Vol.3 (8), p.2601-2605
Hauptverfasser:	Kim, Young-Jun, Yang, Hyeon-Hun, Jeong, Woon-Jo, Park, Joung-Yun, Park, Gye-Choon, Kim, Chang-dae, Park, Hyuk-Ryeol, Ahn, Ho-Geun
Format:	Artikel
Sprache:	eng
Schlagworte:	68.37.Hk 68.55.Jk 73.50.Dn 73.61.Le 81.15.Cd
Online-Zugang:	Volltext
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