Structural and electrical properties of CuInSe2 ternary compound thin films

Process variables for manufacturing CuInSe2 thin films were established in order to clarify optimum conditions for growth of the thin film depending upon process conditions (substrate temperature, sputtering pressure, DC/RF power), and then by changing the number of vapor deposition conditions and annealing conditions, structural and electrical characteristics were measured. Thereby, optimum process variables were derived. For the manufacture of CuInSe2, Cu, In and Se were vapor‐deposited in the named order. Among them, Cu and In were vapor‐deposited by using the sputtering method in consideration of their adhesive force to the substrate, and the DC/RF power was controlled so that the composition of Cu and In might be 1 : 1, while the surface temperature having an effect on the quality of the thin film was changed from 100 °C to 300 °C at intervals of 50 °C. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)