Formation of low-resistance contact between titanium and lightly doped polycrystalline diamond using highly doped interlayer

A low-resistance ohmic contact between lightly doped polycrystalline diamond (poly-C) and metal was achieved for piezoresistive sensor applications using highly doped poly-C thin interlayer in the contact area for the first time for poly-C. Two Trimethylboron (TMB) doping concentrations were used during the growth of poly-C films using microwave plasma chemical vapor deposition (MPCVD), which yielded a 0.2 μm highly doped layer on top of 1.8 μm lightly doped layer. The resistivities of the highly and lightly doped poly-C layers are 0.022 and 151 Ω cm, respectively. The contacts were defined by partially etching the highly doped poly-C layer beyond the contact area. Kelvin bridges are fabricated to test the contact resistance. It is demonstrated that the contact resistivities are 0.0028 and 0.0083 Ω cm 2 for contacts with and without interlayer, respectively. This method reduced the contact resistance to one third of the original value and improved the performance of the piezoresistive sensor.