Structural, magnetic and transport properties of double perovskite compounds (Sr2-3xLa2xBax)FeMoO6

The crystal structure and magnetic properties of a series of ordered double perovskite oxides (Sr2-3xLa2xBax)FeMoO6 (0x0.3) have been investigated. X-ray powder diffraction reveals that the crystal structure of the compounds changes from a tetragonal I4/m lattice to a cubic lattice around x=0.2. Tho...

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Veröffentlicht in:Physica. B, Condensed matter Condensed matter, 2005-12, Vol.370 (1-4), p.228-235
Hauptverfasser: ZHANG, Q, RAO, G. H, DONG, H. Z, XIAO, Y. G, FENG, X. M, LIU, G. Y, ZHANG, Y, LIANG, J. K
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Sprache:eng
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Zusammenfassung:The crystal structure and magnetic properties of a series of ordered double perovskite oxides (Sr2-3xLa2xBax)FeMoO6 (0x0.3) have been investigated. X-ray powder diffraction reveals that the crystal structure of the compounds changes from a tetragonal I4/m lattice to a cubic lattice around x=0.2. Though the nominal average size of the A site cation of (Sr2-3xLa2xBax)FeMoO6 is designed to be almost independent of x, the refinements of the crystal structure show that the lattice constants increase with x in both the tetragonal and the cubic phase regions due to electron doping. As the x increases, the degree of cationic ordering on the B site is decreased pronouncedly, while the Curie temperature of the compounds is nearly unchanged. The saturation magnetization of the compounds decreases with x and shows a linear dependence on the degree of cation ordering. The resistivity of the parent compound shows a semiconducting behavior below room temperature, but those of the doped samples exhibit a metal-semiconductor transition. A correlation between the resistivity and metal-semiconducting transition temperature (TM-S) is observed. The resistivity and TM-S of the compounds decrease with x for x0.2 and increase for x0.2. Magnetoresistance of the compounds is reduced by the La/Ba doping. All these observations can be understood based on the interplay of the electron doping, change in bandwidth and the anti-site defect concentration.
ISSN:0921-4526
1873-2135
DOI:10.1016/j.physb.2005.09.016