Structure and energy of the partial dislocation cores in GaAs

A methodology for investigating isolated α and β partial dislocations in III–V semiconductors is presented. Using this method the 30° and 90°, α and β partial dislocations in GaAs are investigated. The structures of the proposed core reconstructions are investigated. For the 90° partials, two recons...

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Veröffentlicht in:	Physica Status Solidi (b) 2006-07, Vol.243 (9), p.2122-2132
Hauptverfasser:	Beckman, S. P., Chrzan, D. C.
Format:	Artikel
Sprache:	eng
Schlagworte:	31.15.Ar 61.72.Lk 71.55.Eq Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Defects and impurities in crystals microstructure Electron states Exact sciences and technology Iii-v semiconductors Impurity and defect levels Linear defects: dislocations, disclinations Physics Structure of solids and liquids crystallography
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Beschreibung
Zusammenfassung:	A methodology for investigating isolated α and β partial dislocations in III–V semiconductors is presented. Using this method the 30° and 90°, α and β partial dislocations in GaAs are investigated. The structures of the proposed core reconstructions are investigated. For the 90° partials, two reconstructions have been proposed. The relative energies of the two reconstructions are investigated in addition to the structural investigation. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
ISSN:	0370-1972 1521-3951
DOI:	10.1002/pssb.200666808