Speed modulation technique to achieve simultaneous deposition of 3-in. double-sided Y–Ba–Cu–O thin films

We present a sputtering system which allows simultaneous deposition of high- T c superconducting films on both sides of the substrates up to 3-in. diameter. In order to enhance the homogeneity of 3-in. thin films, a speed-modulated bi-axial rotation method has been introduced, by which the thickness...

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Veröffentlicht in:Physica. C, Superconductivity Superconductivity, 2005-12, Vol.433 (1), p.87-92
Hauptverfasser: Tao, Bowan, Chen, Jiajun, Liu, Xingzhao, Zhang, Ying, Deng, Xinwu, Li, Yanrong
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Sprache:eng
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Zusammenfassung:We present a sputtering system which allows simultaneous deposition of high- T c superconducting films on both sides of the substrates up to 3-in. diameter. In order to enhance the homogeneity of 3-in. thin films, a speed-modulated bi-axial rotation method has been introduced, by which the thickness deviation of 3-in. thin films is reduced to less than 5%. The crystalline structure and superconducting properties are measured. The full width at half maximum values of X-ray diffraction ω-scan on YBa 2Cu 3O 7− δ (0 0 5) reflection are 0.15° and 0.21° for the center and the edge, respectively. The measured superconducting transition temperatures T c range from 89.8 K to 90.2 K and the critical current densities j c mapped by j c-scan Leipzig system at 77 K, 0 T are about 2.1–2.5 MA/cm 2. The majority of the wafer area has microwave surface resistances R s (75 K, 145 GHz, 0 T) measured by confocal resonator in the range of 45–80 mΩ. The breakdown field demonstrating the high-frequency power handling capability is higher than 5 mT at 8.5 GHz and 77 K.
ISSN:0921-4534
1873-2143
DOI:10.1016/j.physc.2005.09.016