Speed modulation technique to achieve simultaneous deposition of 3-in. double-sided Y–Ba–Cu–O thin films
We present a sputtering system which allows simultaneous deposition of high- T c superconducting films on both sides of the substrates up to 3-in. diameter. In order to enhance the homogeneity of 3-in. thin films, a speed-modulated bi-axial rotation method has been introduced, by which the thickness...
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Veröffentlicht in: | Physica. C, Superconductivity Superconductivity, 2005-12, Vol.433 (1), p.87-92 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | We present a sputtering system which allows simultaneous deposition of high-
T
c superconducting films on both sides of the substrates up to 3-in. diameter. In order to enhance the homogeneity of 3-in. thin films, a speed-modulated bi-axial rotation method has been introduced, by which the thickness deviation of 3-in. thin films is reduced to less than 5%. The crystalline structure and superconducting properties are measured. The full width at half maximum values of X-ray diffraction
ω-scan on YBa
2Cu
3O
7−
δ
(0
0
5) reflection are 0.15° and 0.21° for the center and the edge, respectively. The measured superconducting transition temperatures
T
c range from 89.8
K to 90.2
K and the critical current densities
j
c mapped by
j
c-scan Leipzig system at 77
K, 0
T are about 2.1–2.5
MA/cm
2. The majority of the wafer area has microwave surface resistances
R
s (75
K, 145
GHz, 0
T) measured by confocal resonator in the range of 45–80
mΩ. The breakdown field demonstrating the high-frequency power handling capability is higher than 5
mT at 8.5
GHz and 77
K. |
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ISSN: | 0921-4534 1873-2143 |
DOI: | 10.1016/j.physc.2005.09.016 |