Spin-polarized edge states of quantum Hall systems on silicon basis

In the context of quantum computing in silicon using spin states the quantum Hall effect offers an opportunity to perform transport measurements with spin-polarized electrons in individual edge states at low filling factors. Suitable Hall bar devices consisting of MOS field effect transistors with embedded split-gates under the top gate have been fabricated. When characterizing the devices at 1.5 K and magnetic fields up to 8 T Shubnikov–de Haas measurements indicate, that filling factors as low as 1/2 corresponding to a single filled edge state can be realized. Transport through constrictions induced by the split-gates shows fluctuations which can be interpreted as the effect of transmission resonances in a one-dimensional channel such that the peaks at the lowest top gate voltage correspond to single mode states in the channel.