Ruthenium Films Deposited by Liquid-Delivery MOCVD Using Bis(ethylcyclopentadienyl)ruthenium with Toluene as the Solvent

Pure ruthenium thin films are prepared by liquid‐delivery metal‐organic (MO)CVD using bis(ethylcyclopentadienyl)ruthenium (Ru(EtCp)2) with toluene as the solvent. The deposition of Ru thin films is carried out on various substrates at temperatures in the range 330–460 °C via the oxygen‐assisted pyrolysis of Ru(EtCp)2. Ru in a single phase can be obtained under all growth conditions. The reaction kinetics, film composition, film morphology, mechanical properties, and electrical properties of deposited Ru films were investigated. The films obtained have a low resistivity value of 20 μΩ cm, low stress values of about 70 MPa, and a preferred crystalline orientation (002), offering potential application in storage‐capacitor electrodes. Pure ruthenium thin films have been prepared using bis(ethylcyclopentadienyl)ruthenium (Ru(EtCp)2) with toluene solvent by liquid‐delivery MOCVD. The deposition of Ru thin films was carried out on various substrates at temperatures of 330–460 °C via the oxygen‐assisted pyrolysis of Ru(EtCp)2. The Ru single phase could be obtained at all growth conditions. The reaction kinetics, film composition, film morphology, and mechanical and electrical properties of the deposited Ru films are investigated.