Simplified edge isolation of buried contact solar cells

The aim of this work is to implement simple edge isolation techniques in buried contact solar cell (BCSC) process by preserving the active cell area. Here we present results of two simplified edge isolation techniques for BCSC and they are compared with the standard process incorporating mechanical edge isolation using a dicing saw. The first technique is chemical wet etching of the solar cell's rear side in an inline system recently developed by University of Konstanz and Rena. The second technique is edge removal carried out in a fluoride/oxide radicals environment of a Asyntis plasma etcher. While the shunt resistance R sh obtained with wet etching is between 1500 and 7000 Ω cm 2, the standard process shows R sh values ranging from 2100–6300 Ω cm 2. The R sh after plasma processing is between 1000 and 3600 Ω cm 2. These cell results show that both wet and plasma etching achieve results close to mechanical edge isolation. However, a slight reduction of short circuit current is observed for the cells undergone standard as well as plasma processing. This is due to the presence of floating volume shunts formed at the rear n–p + junction, which are not removed by either the standard or plasma process. These shunts do not influence the IV-curve of the solar cells and are nearly invisible with conventional thermography, as they are not connected to the front side emitter grid. Hence, light-modulated lock-in thermography measurements were carried out to analyse these shunts.