Use of SiC band gap temperature dependence for absolute calibration of emissivity corrected pyrometers in III-nitride MOVPE
In this paper we will demonstrate a new method for temperature calibration by using the in-situ measured band-gap shift of SiC in conjunction with real-time emissivity corrected pyrometry. The complete procedure for temperature calibration and real-time wafer temperature measurement on transparent s...
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| Veröffentlicht in: | Journal of crystal growth 2004-12, Vol.272 (1), p.81-86 |
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| container_end_page | 86 |
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| container_issue | 1 |
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| container_title | Journal of crystal growth |
| container_volume | 272 |
| creator | Steins, R. Kaluza, N. Hardtdegen, H. Zorn, M. Haberland, K. Zettler, J.-T. |
| description | In this paper we will demonstrate a new method for temperature calibration by using the in-situ measured band-gap shift of SiC in conjunction with real-time emissivity corrected pyrometry. The complete procedure for temperature calibration and real-time wafer temperature measurement on transparent substrates will be presented. |
| doi_str_mv | 10.1016/j.jcrysgro.2004.09.014 |
| format | Article |
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Nitrides</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Exact sciences and technology</subject><subject>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</subject><subject>Physics</subject><subject>Semiconductors</subject><subject>Visible and ultraviolet spectra</subject><issn>0022-0248</issn><issn>1873-5002</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2004</creationdate><recordtype>article</recordtype><recordid>eNqFkEtP3DAURq2KSh2gf6Hyhu6S2nHixDuqEdCRqKhUYGv5cY08ysTB9iCN-PM4GlCX3dy7Od99HIS-UVJTQvmPbb018ZCeYqgbQtqaiJrQ9hNa0aFnVUdIc4JWpTYVadrhCzpNaUtISVKyQq8PCXBw-K9fY60mi5_UjDPsZogq7yNgCzNMFiYD2IWIlU5h3GfARo1eF8aHacnDzqfkX3w-YBNiBJPB4vkQww4yxIT9hDebTTX5HL0F_Pvu8c_VOfrs1Jjg63s_Qw_XV_frX9Xt3c1m_fO2MqynubLK0R46yzQw54xgPefO8Zb3XA-sY8MAomHaaUPBDrrVfcdoq3qhiW6pUewMfT_OnWN43kPKshxrYBzVBGGfZCM6wcu0AvIjaGJIKYKTc_Q7FQ-SErm4llv54VouriURsrguwYv3DSoVMS6qyfj0L80ZawYhCnd55KC8--IhymT84tb6RZm0wf9v1RsIL5rz</recordid><startdate>20041210</startdate><enddate>20041210</enddate><creator>Steins, R.</creator><creator>Kaluza, N.</creator><creator>Hardtdegen, H.</creator><creator>Zorn, M.</creator><creator>Haberland, K.</creator><creator>Zettler, J.-T.</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20041210</creationdate><title>Use of SiC band gap temperature dependence for absolute calibration of emissivity corrected pyrometers in III-nitride MOVPE</title><author>Steins, R. ; Kaluza, N. ; Hardtdegen, H. ; Zorn, M. ; Haberland, K. ; Zettler, J.-T.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c371t-daf17e5d3be3ffc93766ff64676b835388e923bfbc1ed8b4b75314a79b0b41ca3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2004</creationdate><topic>A1. 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| identifier | ISSN: 0022-0248 |
| ispartof | Journal of crystal growth, 2004-12, Vol.272 (1), p.81-86 |
| issn | 0022-0248 1873-5002 |
| language | eng |
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| source | Elsevier ScienceDirect Journals |
| subjects | A1. Characterization A1. Emissivity corrected pyrometry A1. In-situ monitoring A1. Wafer temperature A3. Metalorganic vapor phase epitaxy B1. Nitrides Condensed matter: electronic structure, electrical, magnetic, and optical properties Exact sciences and technology Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Physics Semiconductors Visible and ultraviolet spectra |
| title | Use of SiC band gap temperature dependence for absolute calibration of emissivity corrected pyrometers in III-nitride MOVPE |
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