Use of SiC band gap temperature dependence for absolute calibration of emissivity corrected pyrometers in III-nitride MOVPE

In this paper we will demonstrate a new method for temperature calibration by using the in-situ measured band-gap shift of SiC in conjunction with real-time emissivity corrected pyrometry. The complete procedure for temperature calibration and real-time wafer temperature measurement on transparent s...

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Veröffentlicht in:	Journal of crystal growth 2004-12, Vol.272 (1), p.81-86
Hauptverfasser:	Steins, R., Kaluza, N., Hardtdegen, H., Zorn, M., Haberland, K., Zettler, J.-T.
Format:	Artikel
Sprache:	eng
Schlagworte:	A1. Characterization A1. Emissivity corrected pyrometry A1. In-situ monitoring A1. Wafer temperature A3. Metalorganic vapor phase epitaxy B1. Nitrides Condensed matter: electronic structure, electrical, magnetic, and optical properties Exact sciences and technology Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Physics Semiconductors Visible and ultraviolet spectra
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Beschreibung
Zusammenfassung:	In this paper we will demonstrate a new method for temperature calibration by using the in-situ measured band-gap shift of SiC in conjunction with real-time emissivity corrected pyrometry. The complete procedure for temperature calibration and real-time wafer temperature measurement on transparent substrates will be presented.
ISSN:	0022-0248 1873-5002
DOI:	10.1016/j.jcrysgro.2004.09.014