Preparation of piezoelectric 0.1Pb(Zn0.5W0.5)O3-0.9Pb(Zr0.5Ti0.5)O3 solid solution and thick films for low temperature firing on a Si-substrate
A newly designed lead zirconate titanate (PZT) solid solution 0.1Pb(Zn0.5W0.5)O3-0.9Pb(Zr0.5Ti0.5)O3 was prepared. It is feasible for a low temperature firing. X-ray diffraction shows that its structure is a single perovskite phase, and its thick films were successfully fabricated on a Pt/TiO2/SiNx/...
Gespeichert in:
Veröffentlicht in: | Journal of crystal growth 2006-10, Vol.295 (2), p.172-178 |
---|---|
Hauptverfasser: | , , , , , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | A newly designed lead zirconate titanate (PZT) solid solution 0.1Pb(Zn0.5W0.5)O3-0.9Pb(Zr0.5Ti0.5)O3 was prepared. It is feasible for a low temperature firing. X-ray diffraction shows that its structure is a single perovskite phase, and its thick films were successfully fabricated on a Pt/TiO2/SiNx/Si-substrate through the screen printing method. A conventional screen printing thick film and a hybrid thick film (screen printing and PZT sol infiltration) was also compared. According to an SEM study, the prepared thick film showed a much denser microstructure with the sol infiltration method. The electrical properties of the prepared PZT solid solution and its thick film were predominantly realized in a low temperature region. The dielectric constant of a conventional screen printing thick film and the hybrid thick film (sintered at 900 deg C), was 703.5 and 911.3, respectively. |
---|---|
ISSN: | 0022-0248 1873-5002 |
DOI: | 10.1016/j.jcrysgro.2006.07.005 |