Preparation of piezoelectric 0.1Pb(Zn0.5W0.5)O3-0.9Pb(Zr0.5Ti0.5)O3 solid solution and thick films for low temperature firing on a Si-substrate

A newly designed lead zirconate titanate (PZT) solid solution 0.1Pb(Zn0.5W0.5)O3-0.9Pb(Zr0.5Ti0.5)O3 was prepared. It is feasible for a low temperature firing. X-ray diffraction shows that its structure is a single perovskite phase, and its thick films were successfully fabricated on a Pt/TiO2/SiNx/...

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Veröffentlicht in:Journal of crystal growth 2006-10, Vol.295 (2), p.172-178
Hauptverfasser: Kwon, Tae Yun, Park, Jae Hong, Kim, Yong Bum, Yoon, Dae Sung, Cheon, Chae Il, Lee, Hong Lim, Kim, Tae Song
Format: Artikel
Sprache:eng
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Zusammenfassung:A newly designed lead zirconate titanate (PZT) solid solution 0.1Pb(Zn0.5W0.5)O3-0.9Pb(Zr0.5Ti0.5)O3 was prepared. It is feasible for a low temperature firing. X-ray diffraction shows that its structure is a single perovskite phase, and its thick films were successfully fabricated on a Pt/TiO2/SiNx/Si-substrate through the screen printing method. A conventional screen printing thick film and a hybrid thick film (screen printing and PZT sol infiltration) was also compared. According to an SEM study, the prepared thick film showed a much denser microstructure with the sol infiltration method. The electrical properties of the prepared PZT solid solution and its thick film were predominantly realized in a low temperature region. The dielectric constant of a conventional screen printing thick film and the hybrid thick film (sintered at 900 deg C), was 703.5 and 911.3, respectively.
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2006.07.005