As-grown p-type GaN growth by dimethylhydrazine nitrogen precursor

A new method for the as-grown p-type GaN layer is reported by employing dimethylhydrazine as a new nitrogen precursor. The results of SIMS and Hall-effect measurement show that the hole concentration and mobility of the as-grown p-type GaN are higher than those of the post-activated conventional p-G...

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Veröffentlicht in:	Journal of crystal growth 2004-12, Vol.272 (1), p.426-431
Hauptverfasser:	Park, Eun-Hyun, Park, Joong-Seo, Yoo, Tae-Kyung
Format:	Artikel
Sprache:	eng
Schlagworte:	A3. Metalorganic vapor phase epitaxy Applied sciences B1. Nitrides B2. Semiconducting III–V materials B3. Light-emitting diodes Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Cross-disciplinary physics: materials science rheology Electronics Exact sciences and technology Light-emitting devices Materials science Methods of deposition of films and coatings film growth and epitaxy Optoelectronic devices Physics Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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