As-grown p-type GaN growth by dimethylhydrazine nitrogen precursor

A new method for the as-grown p-type GaN layer is reported by employing dimethylhydrazine as a new nitrogen precursor. The results of SIMS and Hall-effect measurement show that the hole concentration and mobility of the as-grown p-type GaN are higher than those of the post-activated conventional p-GaN samples, with 2–3 times lower Mg concentration. Light-emitting diode device results also show better performances in optical power by 10% and reverse breakdown voltage by 20% while maintaining low V f and I r. The as-grown p-type layer turns out to remain as p-type after a reverse annealing under (NH 3+H 2) at 800 °C for 10 min, and this result is very different from the previous works.