As-grown p-type GaN growth by dimethylhydrazine nitrogen precursor
A new method for the as-grown p-type GaN layer is reported by employing dimethylhydrazine as a new nitrogen precursor. The results of SIMS and Hall-effect measurement show that the hole concentration and mobility of the as-grown p-type GaN are higher than those of the post-activated conventional p-G...
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| Veröffentlicht in: | Journal of crystal growth 2004-12, Vol.272 (1), p.426-431 |
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| container_issue | 1 |
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| container_title | Journal of crystal growth |
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| creator | Park, Eun-Hyun Park, Joong-Seo Yoo, Tae-Kyung |
| description | A new method for the as-grown p-type GaN layer is reported by employing dimethylhydrazine as a new nitrogen precursor. The results of SIMS and Hall-effect measurement show that the hole concentration and mobility of the as-grown p-type GaN are higher than those of the post-activated conventional p-GaN samples, with 2–3 times lower Mg concentration. Light-emitting diode device results also show better performances in optical power by 10% and reverse breakdown voltage by 20% while maintaining low
V
f and
I
r. The as-grown p-type layer turns out to remain as p-type after a reverse annealing under (NH
3+H
2) at 800
°C for 10
min, and this result is very different from the previous works. |
| doi_str_mv | 10.1016/j.jcrysgro.2004.08.081 |
| format | Article |
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V
f and
I
r. The as-grown p-type layer turns out to remain as p-type after a reverse annealing under (NH
3+H
2) at 800
°C for 10
min, and this result is very different from the previous works.</description><identifier>ISSN: 0022-0248</identifier><identifier>EISSN: 1873-5002</identifier><identifier>DOI: 10.1016/j.jcrysgro.2004.08.081</identifier><identifier>CODEN: JCRGAE</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>A3. Metalorganic vapor phase epitaxy ; Applied sciences ; B1. Nitrides ; B2. Semiconducting III–V materials ; B3. Light-emitting diodes ; Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) ; Cross-disciplinary physics: materials science; rheology ; Electronics ; Exact sciences and technology ; Light-emitting devices ; Materials science ; Methods of deposition of films and coatings; film growth and epitaxy ; Optoelectronic devices ; Physics ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><ispartof>Journal of crystal growth, 2004-12, Vol.272 (1), p.426-431</ispartof><rights>2004 Elsevier B.V.</rights><rights>2005 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c371t-b4d06e9e543661ba16d32b19d612bf992500f21a34c2e42f9a06a754ca1c8a1c3</citedby><cites>FETCH-LOGICAL-c371t-b4d06e9e543661ba16d32b19d612bf992500f21a34c2e42f9a06a754ca1c8a1c3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.jcrysgro.2004.08.081$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>309,310,314,780,784,789,790,3548,23929,23930,25139,27923,27924,45994</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=16332952$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Park, Eun-Hyun</creatorcontrib><creatorcontrib>Park, Joong-Seo</creatorcontrib><creatorcontrib>Yoo, Tae-Kyung</creatorcontrib><title>As-grown p-type GaN growth by dimethylhydrazine nitrogen precursor</title><title>Journal of crystal growth</title><description>A new method for the as-grown p-type GaN layer is reported by employing dimethylhydrazine as a new nitrogen precursor. The results of SIMS and Hall-effect measurement show that the hole concentration and mobility of the as-grown p-type GaN are higher than those of the post-activated conventional p-GaN samples, with 2–3 times lower Mg concentration. Light-emitting diode device results also show better performances in optical power by 10% and reverse breakdown voltage by 20% while maintaining low
V
f and
I
r. The as-grown p-type layer turns out to remain as p-type after a reverse annealing under (NH
3+H
2) at 800
°C for 10
min, and this result is very different from the previous works.</description><subject>A3. Metalorganic vapor phase epitaxy</subject><subject>Applied sciences</subject><subject>B1. Nitrides</subject><subject>B2. Semiconducting III–V materials</subject><subject>B3. Light-emitting diodes</subject><subject>Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Light-emitting devices</subject><subject>Materials science</subject><subject>Methods of deposition of films and coatings; film growth and epitaxy</subject><subject>Optoelectronic devices</subject><subject>Physics</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><issn>0022-0248</issn><issn>1873-5002</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2004</creationdate><recordtype>article</recordtype><recordid>eNqFUMtOwzAQtBBIlMIvoFzgluC1Eze5UapSkCq4wNlynE3rKE2CnYLC1-OoRRyR9iGtZnZ2h5BroBFQEHdVVGk7uI1tI0ZpHNHUB5yQCaQzHiaUslMy8ZWFlMXpOblwrqLUM4FOyMPchZ751QRd2A8dBiv1EoyDfhvkQ1CYHfbbod4OhVXfpsGgMb1tN-jxFvXeutZekrNS1Q6vjn1K3h-Xb4uncP26el7M16HmM-jDPC6owAyTmAsBuQJRcJZDVghgeZllzF9aMlA81gxjVmaKCjVLYq1Apz75lNwe9na2_dij6-XOOI11rRps906yLMkgTZgHigNQ29Y5i6XsrNkpO0igcrRMVvLXMjlaJmnqAzzx5qignFZ1aVWjjftjC869yChwf8Chf_fToJVOG2w0Fsab0suiNf9J_QBp5IWo</recordid><startdate>20041210</startdate><enddate>20041210</enddate><creator>Park, Eun-Hyun</creator><creator>Park, Joong-Seo</creator><creator>Yoo, Tae-Kyung</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20041210</creationdate><title>As-grown p-type GaN growth by dimethylhydrazine nitrogen precursor</title><author>Park, Eun-Hyun ; Park, Joong-Seo ; Yoo, Tae-Kyung</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c371t-b4d06e9e543661ba16d32b19d612bf992500f21a34c2e42f9a06a754ca1c8a1c3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2004</creationdate><topic>A3. Metalorganic vapor phase epitaxy</topic><topic>Applied sciences</topic><topic>B1. Nitrides</topic><topic>B2. Semiconducting III–V materials</topic><topic>B3. Light-emitting diodes</topic><topic>Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Light-emitting devices</topic><topic>Materials science</topic><topic>Methods of deposition of films and coatings; film growth and epitaxy</topic><topic>Optoelectronic devices</topic><topic>Physics</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Park, Eun-Hyun</creatorcontrib><creatorcontrib>Park, Joong-Seo</creatorcontrib><creatorcontrib>Yoo, Tae-Kyung</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of crystal growth</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Park, Eun-Hyun</au><au>Park, Joong-Seo</au><au>Yoo, Tae-Kyung</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>As-grown p-type GaN growth by dimethylhydrazine nitrogen precursor</atitle><jtitle>Journal of crystal growth</jtitle><date>2004-12-10</date><risdate>2004</risdate><volume>272</volume><issue>1</issue><spage>426</spage><epage>431</epage><pages>426-431</pages><issn>0022-0248</issn><eissn>1873-5002</eissn><coden>JCRGAE</coden><abstract>A new method for the as-grown p-type GaN layer is reported by employing dimethylhydrazine as a new nitrogen precursor. The results of SIMS and Hall-effect measurement show that the hole concentration and mobility of the as-grown p-type GaN are higher than those of the post-activated conventional p-GaN samples, with 2–3 times lower Mg concentration. Light-emitting diode device results also show better performances in optical power by 10% and reverse breakdown voltage by 20% while maintaining low
V
f and
I
r. The as-grown p-type layer turns out to remain as p-type after a reverse annealing under (NH
3+H
2) at 800
°C for 10
min, and this result is very different from the previous works.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.jcrysgro.2004.08.081</doi><tpages>6</tpages></addata></record> |
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| ispartof | Journal of crystal growth, 2004-12, Vol.272 (1), p.426-431 |
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| language | eng |
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| source | Elsevier ScienceDirect Journals Complete |
| subjects | A3. Metalorganic vapor phase epitaxy Applied sciences B1. Nitrides B2. Semiconducting III–V materials B3. Light-emitting diodes Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Cross-disciplinary physics: materials science rheology Electronics Exact sciences and technology Light-emitting devices Materials science Methods of deposition of films and coatings film growth and epitaxy Optoelectronic devices Physics Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices |
| title | As-grown p-type GaN growth by dimethylhydrazine nitrogen precursor |
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