Arsenic cross-contamination in GaSb/InAs superlattices

We have investigated the cross-contamination of As in GaSb/InAs superlattices. We demonstrate a method of varying the lattice constant of the superlattice. By controlling the As background pressure in the growth chamber, the strain can be controlled to about 0.01%, corresponding to As cross-incorpor...

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Veröffentlicht in:	Journal of crystal growth 2004-10, Vol.270 (3-4), p.301-308
Hauptverfasser:	Jackson, E.M., Boishin, G.I., Aifer, E.H., Bennett, B.R., Whitman, L.J.
Format:	Artikel
Sprache:	eng
Schlagworte:	A3. Molecular beam epitaxy A3. Superlattices B1. Antimonides B1. Arsenates B2. Semiconducting III–V materials Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Deformation and plasticity (including yield, ductility, and superplasticity) Exact sciences and technology Materials science Mechanical and acoustical properties of condensed matter Mechanical properties of solids Methods of deposition of films and coatings film growth and epitaxy Molecular, atomic, ion, and chemical beam epitaxy Physics
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Beschreibung
Zusammenfassung:	We have investigated the cross-contamination of As in GaSb/InAs superlattices. We demonstrate a method of varying the lattice constant of the superlattice. By controlling the As background pressure in the growth chamber, the strain can be controlled to about 0.01%, corresponding to As cross-incorporation variations of about ±1%. The distribution of As is investigated by X-ray diffraction and cross-sectional scanning tunneling microscopy, and the critical thickness is obtained.
ISSN:	0022-0248 1873-5002
DOI:	10.1016/j.jcrysgro.2004.06.033