Electric-Field-Tunable Edge Transport in Bernal-Stacked Trilayer Graphene

This Letter presents a nonlocal study on the electric-field-tunable edge transport in h-BN-encapsulated dual-gated Bernal-stacked (ABA) trilayer graphene across various displacement fields (D) and temperatures (T). Our measurements revealed that the nonlocal resistance (R_{NL}) surpassed the expecte...

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Veröffentlicht in:Physical review letters 2024-03, Vol.132 (9), p.096301-096301, Article 096301
Hauptverfasser: Srivastav, Saurabh Kumar, Udupa, Adithi, Watanabe, K, Taniguchi, T, Sen, Diptiman, Das, Anindya
Format: Artikel
Sprache:eng
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Zusammenfassung:This Letter presents a nonlocal study on the electric-field-tunable edge transport in h-BN-encapsulated dual-gated Bernal-stacked (ABA) trilayer graphene across various displacement fields (D) and temperatures (T). Our measurements revealed that the nonlocal resistance (R_{NL}) surpassed the expected classical Ohmic contribution by a factor of at least 2 orders of magnitude. Through scaling analysis, we found that the nonlocal resistance scales linearly with the local resistance (R_{L}) only when the D exceeds a critical value of ∼0.2  V/nm. Additionally, we observed that the scaling exponent remains constant at unity for temperatures below the bulk-band gap energy threshold (T
ISSN:0031-9007
1079-7114
DOI:10.1103/PhysRevLett.132.096301