Recent advances in insulated gate bipolar transistor technology

Device design of the insulated gate bipolar transistor (IGBT) has been optimized to reduce the distributed transmission-line effect. In addition, cell geometry is chosen to yield high latchup current capability and low forward-voltage drop simultaneously. The vertical structure is optimized to enhan...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	IEEE transactions on industry applications 1990-09, Vol.26 (5), p.831-834
Hauptverfasser:	Yilmaz, H., Owyang, K., Chang, M.F., Benjamin, J.L., Van Dell, W.R.
Format:	Artikel
Sprache:	eng
Schlagworte:	Bipolar transistors Current density Equivalent circuits Geometry Industry Applications Society Insulated gate bipolar transistors Low voltage MOSFETs Power semiconductor switches
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!