Recent advances in insulated gate bipolar transistor technology

Recent advances in insulated gate bipolar transistor technology

Device design of the insulated gate bipolar transistor (IGBT) has been optimized to reduce the distributed transmission-line effect. In addition, cell geometry is chosen to yield high latchup current capability and low forward-voltage drop simultaneously. The vertical structure is optimized to enhan...

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Veröffentlicht in:IEEE transactions on industry applications 1990-09, Vol.26 (5), p.831-834
Hauptverfasser: Yilmaz, H., Owyang, K., Chang, M.F., Benjamin, J.L., Van Dell, W.R.
Format: Artikel
Sprache:eng
Schlagworte:
Bipolar transistors
Current density
Equivalent circuits
Geometry
Industry Applications Society
Insulated gate bipolar transistors
Low voltage
MOSFETs
Power semiconductor switches
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Zusammenfassung:Device design of the insulated gate bipolar transistor (IGBT) has been optimized to reduce the distributed transmission-line effect. In addition, cell geometry is chosen to yield high latchup current capability and low forward-voltage drop simultaneously. The vertical structure is optimized to enhance both the turn-off speed and the safe operating area of the IGBTs. The turn-off time of the n-IGBT has been shortened to be as low as 40 ns. The p-channel IGBT latchup current has been improved four to six times over the previously reported results through innovative design and processes. An open-base bipolar transistor model has been implemented to investigate transient IGBT characteristics.< >
ISSN:0093-9994
1939-9367
DOI:10.1109/28.60048