Optimising flash memory tunnel programming

Flash memory programming by means of Fowler–Nordheim tunnelling has been studied with the aim of minimising oxide degradation and, at the same time, limiting the program voltage and reducing the program time. The target has been obtained using a waveform composed of a few number of pulses. The progr...

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Veröffentlicht in:	Microelectronic engineering 2004-04, Vol.72 (1), p.405-410
Hauptverfasser:	Irrera, Fernanda, Fristachi, Teodoro, Caputo, Domenico, Riccò, Bruno
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Design. Technologies. Operation analysis. Testing Electronics Exact sciences and technology Flash memory Integrated circuits Integrated circuits by function (including memories and processors) Oxide degradation Program time Program voltage Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Trap dynamics Tunnel programming
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Zusammenfassung:	Flash memory programming by means of Fowler–Nordheim tunnelling has been studied with the aim of minimising oxide degradation and, at the same time, limiting the program voltage and reducing the program time. The target has been obtained using a waveform composed of a few number of pulses. The program accuracy has been validated by means of measurements on a set of flash cells. In particular, using 7 nm-thick tunnel oxide, program time and voltage of, respectively, 21 μs and 18 V, have been demonstrated for a target shift voltage of 1.5 V. Using the optimised waveform, cycling has negligible effects on the program window.
ISSN:	0167-9317 1873-5568
DOI:	10.1016/j.mee.2004.01.022