Self-organized dot patterns on Si surfaces during noble gas ion beam erosion
The erosion of target materials with energetic ions can lead to the formation of patterns on the surface. During low-energy (⩽2000 eV) noble gas (Ne +, Ar +, Kr +, Xe +) ion beam erosion of silicon surfaces dot patterns evolve on the surface. Dot structures form at oblique ion incidence of 75° with...
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Veröffentlicht in: | Surface science 2006-09, Vol.600 (18), p.3757-3761 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | The erosion of target materials with energetic ions can lead to the formation of patterns on the surface. During low-energy (⩽2000
eV) noble gas (Ne
+, Ar
+, Kr
+, Xe
+) ion beam erosion of silicon surfaces dot patterns evolve on the surface. Dot structures form at oblique ion incidence of 75° with respect to surface normal, with simultaneous sample rotation, at room temperature. The lateral ordering of dots increases while the dot size remains constant with ion fluence, leading to very well ordered dot patterns for prolonged sputtering. Depending on ion beam parameters, dot nanostructures have a mean size from 25
nm up to 50
nm, and a mean height up to 15
nm. The formation of dot patterns depends on the ion/target mass ratio and on the ion energy. The temporal evolution and the lateral ordering of these nanostructures is studied using scanning force microscopy (AFM). |
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ISSN: | 0039-6028 1879-2758 |
DOI: | 10.1016/j.susc.2005.12.072 |