Organic Materials and Thin-Film Structures for Cross-Point Memory Cells Based on Trapping in Metallic Nanoparticles

Non‐volatile solid‐state memory cells based on composites of metal nanoparticles and polymers are embedded in organic semiconducting host materials. This paper presents data from a wide range of materials and device structures and shows that the switching phenomenon is commonly observed. Non‐volatile solid‐state memory cells based on composites of metal nanoparticles and polymers (see Figure) are embedded in organic semiconducting host materials. This paper presents data from a wide range of materials and device structures and shows that the switching phenomenon is commonly observed. The requirements for switching behavior are surprisingly modest: discrete nanoscopic traps embedded in a wide‐bandgap semiconductor host.