Fabrication of Self-Aligned Sub-100 nm Iron Wires by Selective Chemical Vapor Deposition

We have demonstrated the ability to fabricate and self-align sub-100 nm iron wires using a combination of silicon nitride spacer technology and selective deposition of iron and tungsten by chemical vapor deposition (CVD). The discovery of selective deposition of CVD iron, from pentacarbonyl [Fe(CO)5...

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Veröffentlicht in:Electrochemical and solid-state letters 2006, Vol.9 (12), p.G340-G342
Hauptverfasser: Low, Yee Hooi, Bain, Michael F., Bien, Daniel C. S., Mitchell, Neil S. J., Gamble, Harold S.
Format: Artikel
Sprache:eng
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Zusammenfassung:We have demonstrated the ability to fabricate and self-align sub-100 nm iron wires using a combination of silicon nitride spacer technology and selective deposition of iron and tungsten by chemical vapor deposition (CVD). The discovery of selective deposition of CVD iron, from pentacarbonyl [Fe(CO)5] precursor, on silicon nitride surfaces over tungsten surfaces is the key factor that allows the self-alignment of iron wires. The density and conductivity of the CVD iron layers improved as the deposition temperature increased. Deposition time of 1 min was sufficient to deposit a perfectly aligned, continuous iron wire. The deposited iron layer shows 100% selectivity.
ISSN:1099-0062
DOI:10.1149/1.2353898