Band-Edge Energies and Photoelectrochemical Properties of n-Type AlxGa1-xN and InyGa1-yN Alloys

Band-Edge Energies and Photoelectrochemical Properties of n-Type AlxGa1-xN and InyGa1-yN Alloys

We studied photoelectrochemical properties of AlxGa1_xN for the first time, and compared with those of InyGa1_yN. The conduction band-edge energy of n-type AlxGa1_xN decreased with Al composition, however the valence band-edge energy did not significantly change. Saturated photocurrent obtained from...

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Veröffentlicht in:Journal of the Electrochemical Society 2007-01, Vol.154 (2), p.B175-B179
Hauptverfasser: Ono, Katsushi Masato, Ito, Takashi, Iwaki, Yasuhiro, Hirako, Akira, Ohkawa, Kazuhiro
Format: Artikel
Sprache:eng
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Zusammenfassung:We studied photoelectrochemical properties of AlxGa1_xN for the first time, and compared with those of InyGa1_yN. The conduction band-edge energy of n-type AlxGa1_xN decreased with Al composition, however the valence band-edge energy did not significantly change. Saturated photocurrent obtained from dynamic photocurrent-voltage measurements under illumination also decreased with increasing Al composition. Greater Al composition also shifted the onset voltage to more negative direction. These phenomena can be explained by the changes of bandgap and band-edge energies with Al composition.
ISSN:0013-4651
DOI:10.1149/1.2402104