Radiation defects and degradation of Si photodiodes irradiated by neutrons at low temperature
The degradation behavior for Si p–i–n photodiodes by neutron irradiation at different temperatures was studied. The degradation of the electrical device performance is more pronounced for low-temperature irradiations. Two electron capture levels at E C - 0.22 eV and E C - 0.40 eV , respectively, wer...
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| Veröffentlicht in: | Physica. B, Condensed matter Condensed matter, 2006-04, Vol.376, p.403-406 |
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| container_title | Physica. B, Condensed matter |
| container_volume | 376 |
| creator | Takakura, K. Hayama, K. Watanabe, D. Ohyama, H. Kudou, T. Shigaki, K. Matsuda, S. Kuboyama, S. Kishikawa, T. Uemura, J. Simoen, E. Claeys, C. |
| description | The degradation behavior for Si p–i–n photodiodes by neutron irradiation at different temperatures was studied. The degradation of the electrical device performance is more pronounced for low-temperature irradiations. Two electron capture levels at
E
C
-
0.22
eV
and
E
C
-
0.40
eV
, respectively, were observed by deep level transient spectroscopy. The degradation of the device performance is correlated with the introduction rate of the radiation-induced lattice defects. |
| doi_str_mv | 10.1016/j.physb.2005.12.104 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_29537652</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0921452605014924</els_id><sourcerecordid>29537652</sourcerecordid><originalsourceid>FETCH-LOGICAL-c334t-a861e91da86d5d0e16b54990949cc9b12653674dc357aef13fd6d307614550ba3</originalsourceid><addsrcrecordid>eNp9kM1LAzEQxYMoWKt_gZecvG3NJJuse_Ag4hcUBD-OErLJrE1pN2uSKv3vjdazc3nD4_0G5hFyCmwGDNT5cjYutqmbccbkDHgx6z0ygYtGVByE3CcT1nKoasnVITlKacnKQAMT8vZknDfZh4E67NHmRM3gyv4ejdv5oafPno6LkIPzwWGiPsZfCh3ttnTATY5hKGCmq_BFM65HjCZvIh6Tg96sEp786ZS83t68XN9X88e7h-ureWWFqHNlLhRgC66ok44hqE7WbcvaurW27YArKVRTOytkY7AH0TvlBGsU1FKyzogpOdvdHWP42GDKeu2TxdXKDBg2SfNWikZJXoJiF7QxpBSx12P0axO3Gpj-qVIv9W-V-qdKDbyYdaEudxSWHz49Rp2sx8Gi87FUpl3w__Lfj7V-0A</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>29537652</pqid></control><display><type>article</type><title>Radiation defects and degradation of Si photodiodes irradiated by neutrons at low temperature</title><source>Access via ScienceDirect (Elsevier)</source><creator>Takakura, K. ; Hayama, K. ; Watanabe, D. ; Ohyama, H. ; Kudou, T. ; Shigaki, K. ; Matsuda, S. ; Kuboyama, S. ; Kishikawa, T. ; Uemura, J. ; Simoen, E. ; Claeys, C.</creator><creatorcontrib>Takakura, K. ; Hayama, K. ; Watanabe, D. ; Ohyama, H. ; Kudou, T. ; Shigaki, K. ; Matsuda, S. ; Kuboyama, S. ; Kishikawa, T. ; Uemura, J. ; Simoen, E. ; Claeys, C.</creatorcontrib><description>The degradation behavior for Si p–i–n photodiodes by neutron irradiation at different temperatures was studied. The degradation of the electrical device performance is more pronounced for low-temperature irradiations. Two electron capture levels at
E
C
-
0.22
eV
and
E
C
-
0.40
eV
, respectively, were observed by deep level transient spectroscopy. The degradation of the device performance is correlated with the introduction rate of the radiation-induced lattice defects.</description><identifier>ISSN: 0921-4526</identifier><identifier>EISSN: 1873-2135</identifier><identifier>DOI: 10.1016/j.physb.2005.12.104</identifier><language>eng</language><publisher>Elsevier B.V</publisher><subject>Induced defect levels ; Neutron irradiation ; Radiation damage ; Si photodiode</subject><ispartof>Physica. B, Condensed matter, 2006-04, Vol.376, p.403-406</ispartof><rights>2005 Elsevier B.V.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c334t-a861e91da86d5d0e16b54990949cc9b12653674dc357aef13fd6d307614550ba3</citedby><cites>FETCH-LOGICAL-c334t-a861e91da86d5d0e16b54990949cc9b12653674dc357aef13fd6d307614550ba3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.physb.2005.12.104$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>315,781,785,3551,27928,27929,45999</link.rule.ids></links><search><creatorcontrib>Takakura, K.</creatorcontrib><creatorcontrib>Hayama, K.</creatorcontrib><creatorcontrib>Watanabe, D.</creatorcontrib><creatorcontrib>Ohyama, H.</creatorcontrib><creatorcontrib>Kudou, T.</creatorcontrib><creatorcontrib>Shigaki, K.</creatorcontrib><creatorcontrib>Matsuda, S.</creatorcontrib><creatorcontrib>Kuboyama, S.</creatorcontrib><creatorcontrib>Kishikawa, T.</creatorcontrib><creatorcontrib>Uemura, J.</creatorcontrib><creatorcontrib>Simoen, E.</creatorcontrib><creatorcontrib>Claeys, C.</creatorcontrib><title>Radiation defects and degradation of Si photodiodes irradiated by neutrons at low temperature</title><title>Physica. B, Condensed matter</title><description>The degradation behavior for Si p–i–n photodiodes by neutron irradiation at different temperatures was studied. The degradation of the electrical device performance is more pronounced for low-temperature irradiations. Two electron capture levels at
E
C
-
0.22
eV
and
E
C
-
0.40
eV
, respectively, were observed by deep level transient spectroscopy. The degradation of the device performance is correlated with the introduction rate of the radiation-induced lattice defects.</description><subject>Induced defect levels</subject><subject>Neutron irradiation</subject><subject>Radiation damage</subject><subject>Si photodiode</subject><issn>0921-4526</issn><issn>1873-2135</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2006</creationdate><recordtype>article</recordtype><recordid>eNp9kM1LAzEQxYMoWKt_gZecvG3NJJuse_Ag4hcUBD-OErLJrE1pN2uSKv3vjdazc3nD4_0G5hFyCmwGDNT5cjYutqmbccbkDHgx6z0ygYtGVByE3CcT1nKoasnVITlKacnKQAMT8vZknDfZh4E67NHmRM3gyv4ejdv5oafPno6LkIPzwWGiPsZfCh3ttnTATY5hKGCmq_BFM65HjCZvIh6Tg96sEp786ZS83t68XN9X88e7h-ureWWFqHNlLhRgC66ok44hqE7WbcvaurW27YArKVRTOytkY7AH0TvlBGsU1FKyzogpOdvdHWP42GDKeu2TxdXKDBg2SfNWikZJXoJiF7QxpBSx12P0axO3Gpj-qVIv9W-V-qdKDbyYdaEudxSWHz49Rp2sx8Gi87FUpl3w__Lfj7V-0A</recordid><startdate>20060401</startdate><enddate>20060401</enddate><creator>Takakura, K.</creator><creator>Hayama, K.</creator><creator>Watanabe, D.</creator><creator>Ohyama, H.</creator><creator>Kudou, T.</creator><creator>Shigaki, K.</creator><creator>Matsuda, S.</creator><creator>Kuboyama, S.</creator><creator>Kishikawa, T.</creator><creator>Uemura, J.</creator><creator>Simoen, E.</creator><creator>Claeys, C.</creator><general>Elsevier B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20060401</creationdate><title>Radiation defects and degradation of Si photodiodes irradiated by neutrons at low temperature</title><author>Takakura, K. ; Hayama, K. ; Watanabe, D. ; Ohyama, H. ; Kudou, T. ; Shigaki, K. ; Matsuda, S. ; Kuboyama, S. ; Kishikawa, T. ; Uemura, J. ; Simoen, E. ; Claeys, C.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c334t-a861e91da86d5d0e16b54990949cc9b12653674dc357aef13fd6d307614550ba3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2006</creationdate><topic>Induced defect levels</topic><topic>Neutron irradiation</topic><topic>Radiation damage</topic><topic>Si photodiode</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Takakura, K.</creatorcontrib><creatorcontrib>Hayama, K.</creatorcontrib><creatorcontrib>Watanabe, D.</creatorcontrib><creatorcontrib>Ohyama, H.</creatorcontrib><creatorcontrib>Kudou, T.</creatorcontrib><creatorcontrib>Shigaki, K.</creatorcontrib><creatorcontrib>Matsuda, S.</creatorcontrib><creatorcontrib>Kuboyama, S.</creatorcontrib><creatorcontrib>Kishikawa, T.</creatorcontrib><creatorcontrib>Uemura, J.</creatorcontrib><creatorcontrib>Simoen, E.</creatorcontrib><creatorcontrib>Claeys, C.</creatorcontrib><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Physica. B, Condensed matter</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Takakura, K.</au><au>Hayama, K.</au><au>Watanabe, D.</au><au>Ohyama, H.</au><au>Kudou, T.</au><au>Shigaki, K.</au><au>Matsuda, S.</au><au>Kuboyama, S.</au><au>Kishikawa, T.</au><au>Uemura, J.</au><au>Simoen, E.</au><au>Claeys, C.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Radiation defects and degradation of Si photodiodes irradiated by neutrons at low temperature</atitle><jtitle>Physica. B, Condensed matter</jtitle><date>2006-04-01</date><risdate>2006</risdate><volume>376</volume><spage>403</spage><epage>406</epage><pages>403-406</pages><issn>0921-4526</issn><eissn>1873-2135</eissn><abstract>The degradation behavior for Si p–i–n photodiodes by neutron irradiation at different temperatures was studied. The degradation of the electrical device performance is more pronounced for low-temperature irradiations. Two electron capture levels at
E
C
-
0.22
eV
and
E
C
-
0.40
eV
, respectively, were observed by deep level transient spectroscopy. The degradation of the device performance is correlated with the introduction rate of the radiation-induced lattice defects.</abstract><pub>Elsevier B.V</pub><doi>10.1016/j.physb.2005.12.104</doi><tpages>4</tpages></addata></record> |
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| language | eng |
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| source | Access via ScienceDirect (Elsevier) |
| subjects | Induced defect levels Neutron irradiation Radiation damage Si photodiode |
| title | Radiation defects and degradation of Si photodiodes irradiated by neutrons at low temperature |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-16T18%3A53%3A10IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Radiation%20defects%20and%20degradation%20of%20Si%20photodiodes%20irradiated%20by%20neutrons%20at%20low%20temperature&rft.jtitle=Physica.%20B,%20Condensed%20matter&rft.au=Takakura,%20K.&rft.date=2006-04-01&rft.volume=376&rft.spage=403&rft.epage=406&rft.pages=403-406&rft.issn=0921-4526&rft.eissn=1873-2135&rft_id=info:doi/10.1016/j.physb.2005.12.104&rft_dat=%3Cproquest_cross%3E29537652%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=29537652&rft_id=info:pmid/&rft_els_id=S0921452605014924&rfr_iscdi=true |