Radiation defects and degradation of Si photodiodes irradiated by neutrons at low temperature

The degradation behavior for Si p–i–n photodiodes by neutron irradiation at different temperatures was studied. The degradation of the electrical device performance is more pronounced for low-temperature irradiations. Two electron capture levels at E C - 0.22 eV and E C - 0.40 eV , respectively, were observed by deep level transient spectroscopy. The degradation of the device performance is correlated with the introduction rate of the radiation-induced lattice defects.