Pressure dependence of AgInS2 crystals grown by hot-press method

AgInS2 crystal could be grown by a Hot‐Press (HP) method with pressure (10 ∼ 90 MPa) at 700 °C. From X‐ray diffraction measurements, the samples grown at 10 ∼ 40 MPa were found to contain only AgInS2 phase. However, a signal from AgIn5S8 phase increased with increasing pressure above 40 MPa. The lat...

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Veröffentlicht in:	Physica status solidi. C 2006-09, Vol.3 (8), p.2648-2651
Hauptverfasser:	Yoshino, K., Kinoshita, A., Nomoto, K., Kakeno, T., Seto, S., Akaki, Y., Ikari, T.
Format:	Artikel
Sprache:	eng
Schlagworte:	61.10.Nz 78.55.Hx 81.05.Hd 81.10.Jt
Online-Zugang:	Volltext
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