Pressure dependence of AgInS2 crystals grown by hot-press method

AgInS2 crystal could be grown by a Hot‐Press (HP) method with pressure (10 ∼ 90 MPa) at 700 °C. From X‐ray diffraction measurements, the samples grown at 10 ∼ 40 MPa were found to contain only AgInS2 phase. However, a signal from AgIn5S8 phase increased with increasing pressure above 40 MPa. The lattice parameters of a and c axes increased and were almost constants with increasing pressure below and above 40 MPa, respectively. A donor‐type defect of interstitial Ag might be enhanced to electrical conductivity in the all samples because samples indicated n‐type conductivity examined by thermoprobe analysis. Moreover, high purity sample could be obtained in the HP method because a free exciton emission was clearly and no deep emission was observed in the photoluminescence spectrum. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)