Band structure of the diluted magnetic semiconductor MnxCd1−x GeAs2

The electron-density-functional approach is used to calculate the band structure of the CdGeAs2 semiconductor and the diluted magnetic semiconductor MnxCd1-x GeAs2, which has a ferromagnetic structure at x = 0.06. The results indicate that the incorporation of Mn increases the band gap at its center...

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Veröffentlicht in:	Inorganic materials 2006-08, Vol.42 (8), p.835-838
Hauptverfasser:	Yarzhemsky, V. G., Murashov, S. V., Nefedov, V. I., Murav’ev, E. N., Molchanov, A. V., Bagatur’yants, A. A., Knizhnik, A. A., Morozova, V. A.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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Zusammenfassung:	The electron-density-functional approach is used to calculate the band structure of the CdGeAs2 semiconductor and the diluted magnetic semiconductor MnxCd1-x GeAs2, which has a ferromagnetic structure at x = 0.06. The results indicate that the incorporation of Mn increases the band gap at its center and leads to the formation of a band derived from Mn levels, whose energy is a weak function of wave vector. The calculation results agree with experimental data.
ISSN:	0020-1685 1608-3172
DOI:	10.1134/S002016850608005X