Projection mask-less lithography (PML2): First results from the multi beam blanking demonstrator
A proof-of-concept multi beam blanking device (“blanking demonstrator”) has been fabricated for the projection mask-less lithography project. It comprises a Si chip with approx. 4000 openings (each has a size of 8 × 8 μm 2) etched through with adjacent blanking electrodes fabricated by electroplatin...
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| Veröffentlicht in: | Microelectronic engineering 2006-04, Vol.83 (4), p.968-971 |
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| container_title | Microelectronic engineering |
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| creator | Eder-Kapl, Stefan Haugeneder, Ernst Langfischer, Helmut Reimer, Klaus Eichholz, Joerg Witt, Martin Doering, Hans-Joachim Heinitz, Joachim Brandstaetter, Christoph |
| description | A proof-of-concept multi beam blanking device (“blanking demonstrator”) has been fabricated for the projection mask-less lithography project. It comprises a Si chip with approx. 4000 openings (each has a size of 8
×
8
μm
2) etched through with adjacent blanking electrodes fabricated by electroplating. The parameters of the blanking demonstrator such as electrode layout and density of openings are identical to the blanking device of the final production tool. The demonstrator is being tested within a dedicated broad beam electron beam teststand, which has proven to resolve |
| doi_str_mv | 10.1016/j.mee.2006.01.246 |
| format | Article |
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×
8
μm
2) etched through with adjacent blanking electrodes fabricated by electroplating. The parameters of the blanking demonstrator such as electrode layout and density of openings are identical to the blanking device of the final production tool. The demonstrator is being tested within a dedicated broad beam electron beam teststand, which has proven to resolve <2
μrad angular deviation. First experiments with the demonstrator showed a blanking sensitivity of 145–165
μrad/V which is best suited for the driving voltage of CMOS circuits. Cross talk through individual switching of nearest neighbor openings has been determined to be <(1.3
±
0.1)
μrad/V electrode potential. This is well below the cross talk target specified for 45
nm node lithography.</description><identifier>ISSN: 0167-9317</identifier><identifier>EISSN: 1873-5568</identifier><identifier>DOI: 10.1016/j.mee.2006.01.246</identifier><identifier>CODEN: MIENEF</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>Aperture plate system ; Applied sciences ; Design. Technologies. Operation analysis. Testing ; Electronics ; Exact sciences and technology ; Integrated circuits ; Mask-less lithography ; Microelectronic fabrication (materials and surfaces technology) ; ML2 ; Multi beam blanking aperture array ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><ispartof>Microelectronic engineering, 2006-04, Vol.83 (4), p.968-971</ispartof><rights>2006 Elsevier B.V.</rights><rights>2006 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c358t-ad28703ac386ed004f7918fe7c3bca5b99a4754daa5bbe5b97d02095e22b5e1b3</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.sciencedirect.com/science/article/pii/S0167931706001870$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>309,310,314,776,780,785,786,3537,23909,23910,25118,27901,27902,65534</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=17773438$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Eder-Kapl, Stefan</creatorcontrib><creatorcontrib>Haugeneder, Ernst</creatorcontrib><creatorcontrib>Langfischer, Helmut</creatorcontrib><creatorcontrib>Reimer, Klaus</creatorcontrib><creatorcontrib>Eichholz, Joerg</creatorcontrib><creatorcontrib>Witt, Martin</creatorcontrib><creatorcontrib>Doering, Hans-Joachim</creatorcontrib><creatorcontrib>Heinitz, Joachim</creatorcontrib><creatorcontrib>Brandstaetter, Christoph</creatorcontrib><title>Projection mask-less lithography (PML2): First results from the multi beam blanking demonstrator</title><title>Microelectronic engineering</title><description>A proof-of-concept multi beam blanking device (“blanking demonstrator”) has been fabricated for the projection mask-less lithography project. It comprises a Si chip with approx. 4000 openings (each has a size of 8
×
8
μm
2) etched through with adjacent blanking electrodes fabricated by electroplating. The parameters of the blanking demonstrator such as electrode layout and density of openings are identical to the blanking device of the final production tool. The demonstrator is being tested within a dedicated broad beam electron beam teststand, which has proven to resolve <2
μrad angular deviation. First experiments with the demonstrator showed a blanking sensitivity of 145–165
μrad/V which is best suited for the driving voltage of CMOS circuits. Cross talk through individual switching of nearest neighbor openings has been determined to be <(1.3
±
0.1)
μrad/V electrode potential. This is well below the cross talk target specified for 45
nm node lithography.</description><subject>Aperture plate system</subject><subject>Applied sciences</subject><subject>Design. Technologies. Operation analysis. Testing</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Integrated circuits</subject><subject>Mask-less lithography</subject><subject>Microelectronic fabrication (materials and surfaces technology)</subject><subject>ML2</subject><subject>Multi beam blanking aperture array</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><issn>0167-9317</issn><issn>1873-5568</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2006</creationdate><recordtype>article</recordtype><recordid>eNp9kDtP5DAURi20SMwCP4DODWgpEvxI4gQqNOIlDYICauM4N4yHJB58PUj8e4wGiW6r60869-FDyBFnOWe8OlvlI0AuGKtyxnNRVDtkxmsls7Ks6j9klhiVNZKrPfIXccVSLlg9Iy-Pwa_ARucnOhp8ywZApIOLS_8azHr5Sf893i_E6Tm9dgEjDYCbISLtgx9pXAIdU3S0BTPSdjDTm5teaQejnzAGE304ILu9GRAOf-o-eb6-eprfZouHm7v55SKzsqxjZjpRKyaNlXUFHWNFrxpe96CsbK0p26YxhSqLzqR3CymrjgnWlCBEWwJv5T452c5dB_--AYx6dGhhSDeB36AWTSkEL4oE8i1og0cM0Ot1cKMJn5oz_e1Sr3Ryqb9dasZ1cpl6jn-GG7Rm6IOZrMPfRqWULGSduIstB-mnHw6CRutgstC5kCTrzrv_bPkCaUeKZQ</recordid><startdate>20060401</startdate><enddate>20060401</enddate><creator>Eder-Kapl, Stefan</creator><creator>Haugeneder, Ernst</creator><creator>Langfischer, Helmut</creator><creator>Reimer, Klaus</creator><creator>Eichholz, Joerg</creator><creator>Witt, Martin</creator><creator>Doering, Hans-Joachim</creator><creator>Heinitz, Joachim</creator><creator>Brandstaetter, Christoph</creator><general>Elsevier B.V</general><general>Elsevier Science</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20060401</creationdate><title>Projection mask-less lithography (PML2): First results from the multi beam blanking demonstrator</title><author>Eder-Kapl, Stefan ; Haugeneder, Ernst ; Langfischer, Helmut ; Reimer, Klaus ; Eichholz, Joerg ; Witt, Martin ; Doering, Hans-Joachim ; Heinitz, Joachim ; Brandstaetter, Christoph</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c358t-ad28703ac386ed004f7918fe7c3bca5b99a4754daa5bbe5b97d02095e22b5e1b3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2006</creationdate><topic>Aperture plate system</topic><topic>Applied sciences</topic><topic>Design. Technologies. Operation analysis. Testing</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Integrated circuits</topic><topic>Mask-less lithography</topic><topic>Microelectronic fabrication (materials and surfaces technology)</topic><topic>ML2</topic><topic>Multi beam blanking aperture array</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Eder-Kapl, Stefan</creatorcontrib><creatorcontrib>Haugeneder, Ernst</creatorcontrib><creatorcontrib>Langfischer, Helmut</creatorcontrib><creatorcontrib>Reimer, Klaus</creatorcontrib><creatorcontrib>Eichholz, Joerg</creatorcontrib><creatorcontrib>Witt, Martin</creatorcontrib><creatorcontrib>Doering, Hans-Joachim</creatorcontrib><creatorcontrib>Heinitz, Joachim</creatorcontrib><creatorcontrib>Brandstaetter, Christoph</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Microelectronic engineering</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Eder-Kapl, Stefan</au><au>Haugeneder, Ernst</au><au>Langfischer, Helmut</au><au>Reimer, Klaus</au><au>Eichholz, Joerg</au><au>Witt, Martin</au><au>Doering, Hans-Joachim</au><au>Heinitz, Joachim</au><au>Brandstaetter, Christoph</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Projection mask-less lithography (PML2): First results from the multi beam blanking demonstrator</atitle><jtitle>Microelectronic engineering</jtitle><date>2006-04-01</date><risdate>2006</risdate><volume>83</volume><issue>4</issue><spage>968</spage><epage>971</epage><pages>968-971</pages><issn>0167-9317</issn><eissn>1873-5568</eissn><coden>MIENEF</coden><abstract>A proof-of-concept multi beam blanking device (“blanking demonstrator”) has been fabricated for the projection mask-less lithography project. It comprises a Si chip with approx. 4000 openings (each has a size of 8
×
8
μm
2) etched through with adjacent blanking electrodes fabricated by electroplating. The parameters of the blanking demonstrator such as electrode layout and density of openings are identical to the blanking device of the final production tool. The demonstrator is being tested within a dedicated broad beam electron beam teststand, which has proven to resolve <2
μrad angular deviation. First experiments with the demonstrator showed a blanking sensitivity of 145–165
μrad/V which is best suited for the driving voltage of CMOS circuits. Cross talk through individual switching of nearest neighbor openings has been determined to be <(1.3
±
0.1)
μrad/V electrode potential. This is well below the cross talk target specified for 45
nm node lithography.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.mee.2006.01.246</doi><tpages>4</tpages></addata></record> |
| fulltext | fulltext |
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| ispartof | Microelectronic engineering, 2006-04, Vol.83 (4), p.968-971 |
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| source | Elsevier ScienceDirect Journals |
| subjects | Aperture plate system Applied sciences Design. Technologies. Operation analysis. Testing Electronics Exact sciences and technology Integrated circuits Mask-less lithography Microelectronic fabrication (materials and surfaces technology) ML2 Multi beam blanking aperture array Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices |
| title | Projection mask-less lithography (PML2): First results from the multi beam blanking demonstrator |
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