Microstructural analysis of ZnO/ZnS nanocables through Moiré fringe induced by overlapped area of ZnO and ZnS

Unique ZnO/ZnS nanocables were synthesized by the catalyst-free simple thermal vapor transport method. Using the high-resolution transmission electron microscopy, the interface and defect structures of nanocables were investigated. The nanocables were composed of two discrete structures, which grow...

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Veröffentlicht in:Journal of crystal growth 2006-09, Vol.294 (2), p.162-167
Hauptverfasser: Sun, C.W., Jeong, J.S., Lee, J.Y.
Format: Artikel
Sprache:eng
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Zusammenfassung:Unique ZnO/ZnS nanocables were synthesized by the catalyst-free simple thermal vapor transport method. Using the high-resolution transmission electron microscopy, the interface and defect structures of nanocables were investigated. The nanocables were composed of two discrete structures, which grow along [0 0 0 2] or [0 1¯ 1 0] directions in wurtzite and [2 0 0] direction in sphalerite structures. Two-dimensional Moiré fringes appeared in the core area due to a different interplanar spacing between ZnO and ZnS. In the nanocables grown along [0 0 0 2] and [0 1¯ 1 0] direction, stacking faults, which lie in (0 0 0 2) and (0 1¯ 1 0) planes were observed likewise the identical defects were also found in the (1 1 1) plane of the sphalerite structure. This work includes an in-depth discussion regarding the structure and the growth of ZnO/ZnS nanocables.
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2006.06.023