Morphologies of GaN single crystals grown from Ga solutions under flowing ammonia

Gallium nitride (GaN) crystals were synthesized by the reaction between gallium-containing solutions and flowing ammonia at temperatures between 900 and 1050 °C under atmospheric pressure. The crystals were colorless or amber with a size up to 1 mm. Two main morphologies were observed: platelet-like...

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Veröffentlicht in:Journal of crystal growth 2006-07, Vol.292 (2), p.201-205
Hauptverfasser: Sun, G., Meissner, E., Hussy, S., Birkmann, B., Friedrich, J., Müller, G.
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Sprache:eng
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Zusammenfassung:Gallium nitride (GaN) crystals were synthesized by the reaction between gallium-containing solutions and flowing ammonia at temperatures between 900 and 1050 °C under atmospheric pressure. The crystals were colorless or amber with a size up to 1 mm. Two main morphologies were observed: platelet-like and prism-like, which depended on experimental conditions. The observed varieties of the morphology in the cross-section of GaN samples are attributed to a non-uniform distribution of nitrogen species in solution.
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2006.04.014