Investigations of heavy ion irradiation of gallium nitride nanowires and nanocircuits

Results of a first investigation of the response of gallium nitride nanowires to high-Z heavy ion irradiation are reported. Pre-irradiation characterization of the gallium nitride nanowires used in these experiments showed that that they had a two-phase coaxial structure, consisting of an outer shell of zinc–blende-phase gallium nitride and a coaxial core of wurtzite-phase gallium nitride. Observed radiation interactions with the two-phase structure are reported. A nanowire-based field effect transistor using these GaN nanowires showed normal real-time operation during irradiation by Krypton-78 heavy ions under high bias conditions.