Photoluminescence characterization of cubic CdS epilayers
Cubic CdS epilayers were grown on (100) GaAs substrates by hot‐wall epitaxy and their photoluminescence (PL) characteristics were studied. A heavy hole free exciton peak was observed even at room temperature and a light hole free exciton peak was observed at 30–100 K. The temperature dependence of t...
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| Veröffentlicht in: | Physica status solidi. C 2006-03, Vol.3 (4), p.1180-1184 |
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| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | eng |
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| Online-Zugang: | Volltext |
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| Zusammenfassung: | Cubic CdS epilayers were grown on (100) GaAs substrates by hot‐wall epitaxy and their photoluminescence (PL) characteristics were studied. A heavy hole free exciton peak was observed even at room temperature and a light hole free exciton peak was observed at 30–100 K. The temperature dependence of the free excitonic emission intensity was demonstrated using a two‐step quenching mechanism. The excitation power dependence showed that the PL peak at 2.367 eV is due to the free‐to‐bound transition. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) |
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| ISSN: | 1862-6351 1610-1634 1610-1642 |
| DOI: | 10.1002/pssc.200564678 |