On the incorporation mechanism of Fe in GaN grown by metal-organic vapour phase epitaxy
We report an investigation of the incorporation mechanism of iron (Fe) as a dopant in GaN grown by MOVPE. A series of Fe doped GaN structures were studied by secondary ion mass spectrometry (SIMS), atomic force microscopy (AFM) and X‐ray photo‐electron spectroscopy (XPS). A model is presented which...
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| Veröffentlicht in: | Physica status solidi. C 2006-06, Vol.3 (6), p.1429-1434 |
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| container_title | Physica status solidi. C |
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| creator | Balmer, R. S. Soley, D. E. J. Simons, A. J. Mace, J. D. Koker, L. Jackson, P. O. Wallis, D. J. Uren, M. J. Martin, T. |
| description | We report an investigation of the incorporation mechanism of iron (Fe) as a dopant in GaN grown by MOVPE. A series of Fe doped GaN structures were studied by secondary ion mass spectrometry (SIMS), atomic force microscopy (AFM) and X‐ray photo‐electron spectroscopy (XPS). A model is presented which describes the SIMS concentration profiles with excellent agreement, and, it is shown that Fe incorporation into GaN occurs via a surface segregation mechanism. This model is supported by direct measurement of a highly Fe‐rich layer on the surface of Fe doped GaN by XPS. Furthermore, we find that the presence of Fe on the GaN surface promotes a transition from 2D to 3D GaN growth which is confirmed by AFM measurements of RMS roughness with increasing Fe flux. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) |
| doi_str_mv | 10.1002/pssc.200565282 |
| format | Article |
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Furthermore, we find that the presence of Fe on the GaN surface promotes a transition from 2D to 3D GaN growth which is confirmed by AFM measurements of RMS roughness with increasing Fe flux. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)</description><identifier>ISSN: 1862-6351</identifier><identifier>ISSN: 1610-1634</identifier><identifier>EISSN: 1610-1642</identifier><identifier>DOI: 10.1002/pssc.200565282</identifier><language>eng</language><publisher>Berlin: WILEY-VCH Verlag</publisher><subject>64.75.+g ; 66.30.Jt ; 68.55.Ln ; 81.15.Gh ; 82.80.Ms ; 82.80.Pv</subject><ispartof>Physica status solidi. C, 2006-06, Vol.3 (6), p.1429-1434</ispartof><rights>Copyright © 2006 WILEY‐VCH Verlag GmbH & Co. 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This model is supported by direct measurement of a highly Fe‐rich layer on the surface of Fe doped GaN by XPS. Furthermore, we find that the presence of Fe on the GaN surface promotes a transition from 2D to 3D GaN growth which is confirmed by AFM measurements of RMS roughness with increasing Fe flux. (© 2006 WILEY‐VCH Verlag GmbH & Co. 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Status Solidi (c)</addtitle><date>2006-06</date><risdate>2006</risdate><volume>3</volume><issue>6</issue><spage>1429</spage><epage>1434</epage><pages>1429-1434</pages><issn>1862-6351</issn><issn>1610-1634</issn><eissn>1610-1642</eissn><abstract>We report an investigation of the incorporation mechanism of iron (Fe) as a dopant in GaN grown by MOVPE. A series of Fe doped GaN structures were studied by secondary ion mass spectrometry (SIMS), atomic force microscopy (AFM) and X‐ray photo‐electron spectroscopy (XPS). A model is presented which describes the SIMS concentration profiles with excellent agreement, and, it is shown that Fe incorporation into GaN occurs via a surface segregation mechanism. This model is supported by direct measurement of a highly Fe‐rich layer on the surface of Fe doped GaN by XPS. Furthermore, we find that the presence of Fe on the GaN surface promotes a transition from 2D to 3D GaN growth which is confirmed by AFM measurements of RMS roughness with increasing Fe flux. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)</abstract><cop>Berlin</cop><pub>WILEY-VCH Verlag</pub><doi>10.1002/pssc.200565282</doi><tpages>6</tpages></addata></record> |
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| source | Wiley Online Library Journals Frontfile Complete |
| subjects | 64.75.+g 66.30.Jt 68.55.Ln 81.15.Gh 82.80.Ms 82.80.Pv |
| title | On the incorporation mechanism of Fe in GaN grown by metal-organic vapour phase epitaxy |
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