Photoelectrochemical cells based on CdSe films brush plated on high-temperature substrates
CdSe thin films were brush plated on substrates maintained at temperatures in the range 30–90 °C from the precursors. The films exhibited hexagonal crystal structure. Optical band gap of 1.65 eV was obtained. XPS measurements indicated the formation of CdSe. Capacitance–voltage measurements indicate...
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Veröffentlicht in: | Solar energy materials and solar cells 2006-04, Vol.90 (6), p.753-759 |
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Sprache: | eng |
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