Photoelectrochemical cells based on CdSe films brush plated on high-temperature substrates

Photoelectrochemical cells based on CdSe films brush plated on high-temperature substrates

CdSe thin films were brush plated on substrates maintained at temperatures in the range 30–90 °C from the precursors. The films exhibited hexagonal crystal structure. Optical band gap of 1.65 eV was obtained. XPS measurements indicated the formation of CdSe. Capacitance–voltage measurements indicate...

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Veröffentlicht in:Solar energy materials and solar cells 2006-04, Vol.90 (6), p.753-759
Hauptverfasser: Murali, K.R., Austine, A., Jayasutha, B., Trivedi, D.C.
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Brush plating
CdSe
Energy
Exact sciences and technology
Natural energy
Photoelectrochemistry
Photovoltaic conversion
Solar cells. Photoelectrochemical cells
Solar energy
Thin films
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Zusammenfassung:CdSe thin films were brush plated on substrates maintained at temperatures in the range 30–90 °C from the precursors. The films exhibited hexagonal crystal structure. Optical band gap of 1.65 eV was obtained. XPS measurements indicated the formation of CdSe. Capacitance–voltage measurements indicated the films to exhibit n-type behaviour. A carrier density of 10 17 cm −3 was obtained. Photoelectrochemical cells have exhibited higher efficiency compared to earlier reports on brush-plated films. Spectral response measurements indicated a peak quantum efficiency of 75% at 1.65 eV.
ISSN:0927-0248
1879-3398
DOI:10.1016/j.solmat.2005.04.012