Investigation of a GaMnN/GaN/InGaN structure for spin LED

Theoretical and experimental studies of GaMnN/GaN/InGaN structure for a spin LED device were performed. Strong electron spin relaxation was experimentally observed in a InGaN/GaN quantum well. It is shown that the strong spin relaxation might result from the built-in piezoelectric field in strained wurzite heterostructures. A five level k * p model was used for microscopic calculations of the structure inversion asymmetry induced spin-orbit interaction. The magnitude of this interaction is shown to be comparable with that in InGaAs/GaAs quantum structures.