Inversion domains in AlGaN films grown on patterned sapphire substrate

The inversion domain (ID) formed in the Al 0.17Ga 0.83N layer grown by metalorganic chemical vapor deposition on c-plane patterned sapphire was confirmed by transmission electron microscopy. The IDs were found to be generated at the sapphire/AlGaN interface. Most of IDs vanish in the grown layer but...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Journal of crystal growth 2007, Vol.298, p.297-299
Hauptverfasser:	Kawamichi, Shuichi, Nishino, Katsushi, Sumiyoshi, Kazuhide, Tsukihara, Masashi, Yan, Fawang, Sakai, Shiro
Format:	Artikel
Sprache:	eng
Schlagworte:	A1. Inversion domain A3. Metalorganic chemical vapor deposition A3. Transmission electron microscopy B1. Aluminum gallium nitride Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Cross-disciplinary physics: materials science rheology Exact sciences and technology Materials science Methods of deposition of films and coatings film growth and epitaxy Other semiconductors Physics Specific materials Theory and models of film growth
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	The inversion domain (ID) formed in the Al 0.17Ga 0.83N layer grown by metalorganic chemical vapor deposition on c-plane patterned sapphire was confirmed by transmission electron microscopy. The IDs were found to be generated at the sapphire/AlGaN interface. Most of IDs vanish in the grown layer but some IDs propagate to the surface. Contriving the growth process remarkably reduced the density of IDs.
ISSN:	0022-0248 1873-5002
DOI:	10.1016/j.jcrysgro.2006.10.030