Energy Distribution of Electrons Emitted from Silicon Field Emitter Arrays
We propose the application of silicon field emitter array (Si-FEA) to resolve the problem of wafer charging in the ion implantation process. This article reports experiments conducted to review the basic property of Si-FEA. This time, we measured the energy distribution of electrons emitted from thr...
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| Veröffentlicht in: | Shinku 2005, Vol.48(5), pp.329-332 |
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| container_title | Shinku |
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| creator | KOJIMA, Toshihiko NAKAMURA, Kouji GOTOH, Yasuhito TSUJI, Hiroshi ISHIKAWA, Junzo IKEJIRI, Tadashi UMISEDO, Sei SAKAI, Shigeki NAGAI, Nobuo |
| description | We propose the application of silicon field emitter array (Si-FEA) to resolve the problem of wafer charging in the ion implantation process. This article reports experiments conducted to review the basic property of Si-FEA. This time, we measured the energy distribution of electrons emitted from three types of Si-FEA with different number of tips and gate apertures. The result is different from that of platinum field emitter array (Pt-FEA) in some points. First, half bandwidth of Si-FEA distribution is a little smaller than that of Pt-FEA. Second, the energy peak of Si-FEA shifts to lower energy side from Fermi level. Such phenomenon doesn't happen in the energy distribution of Pt-FEA. |
| doi_str_mv | 10.3131/jvsj.48.329 |
| format | Article |
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This article reports experiments conducted to review the basic property of Si-FEA. This time, we measured the energy distribution of electrons emitted from three types of Si-FEA with different number of tips and gate apertures. The result is different from that of platinum field emitter array (Pt-FEA) in some points. First, half bandwidth of Si-FEA distribution is a little smaller than that of Pt-FEA. Second, the energy peak of Si-FEA shifts to lower energy side from Fermi level. Such phenomenon doesn't happen in the energy distribution of Pt-FEA.</description><identifier>ISSN: 0559-8516</identifier><identifier>EISSN: 1880-9413</identifier><identifier>DOI: 10.3131/jvsj.48.329</identifier><language>eng ; jpn</language><publisher>The Vacuum Society of Japan</publisher><ispartof>Shinku, 2005, Vol.48(5), pp.329-332</ispartof><rights>2005 by The Vacuum Society of Japan</rights><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c2629-4d45d09e99c27ec7436aa2863cbe0e0c898e7735eb3506d33fffdeb07ebcd0503</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,1883,4024,27923,27924,27925</link.rule.ids></links><search><creatorcontrib>KOJIMA, Toshihiko</creatorcontrib><creatorcontrib>NAKAMURA, Kouji</creatorcontrib><creatorcontrib>GOTOH, Yasuhito</creatorcontrib><creatorcontrib>TSUJI, Hiroshi</creatorcontrib><creatorcontrib>ISHIKAWA, Junzo</creatorcontrib><creatorcontrib>IKEJIRI, Tadashi</creatorcontrib><creatorcontrib>UMISEDO, Sei</creatorcontrib><creatorcontrib>SAKAI, Shigeki</creatorcontrib><creatorcontrib>NAGAI, Nobuo</creatorcontrib><title>Energy Distribution of Electrons Emitted from Silicon Field Emitter Arrays</title><title>Shinku</title><addtitle>J. Vac. Soc. Jpn.</addtitle><description>We propose the application of silicon field emitter array (Si-FEA) to resolve the problem of wafer charging in the ion implantation process. This article reports experiments conducted to review the basic property of Si-FEA. This time, we measured the energy distribution of electrons emitted from three types of Si-FEA with different number of tips and gate apertures. The result is different from that of platinum field emitter array (Pt-FEA) in some points. First, half bandwidth of Si-FEA distribution is a little smaller than that of Pt-FEA. Second, the energy peak of Si-FEA shifts to lower energy side from Fermi level. 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Vac. Soc. Jpn.</addtitle><date>2005</date><risdate>2005</risdate><volume>48</volume><issue>5</issue><spage>329</spage><epage>332</epage><pages>329-332</pages><issn>0559-8516</issn><eissn>1880-9413</eissn><abstract>We propose the application of silicon field emitter array (Si-FEA) to resolve the problem of wafer charging in the ion implantation process. This article reports experiments conducted to review the basic property of Si-FEA. This time, we measured the energy distribution of electrons emitted from three types of Si-FEA with different number of tips and gate apertures. The result is different from that of platinum field emitter array (Pt-FEA) in some points. First, half bandwidth of Si-FEA distribution is a little smaller than that of Pt-FEA. Second, the energy peak of Si-FEA shifts to lower energy side from Fermi level. 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| title | Energy Distribution of Electrons Emitted from Silicon Field Emitter Arrays |
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