Investigation of Carrier Recombination Processes and Transport Properties in GaInAsN/GaAs Quantum Wells

Investigation of Carrier Recombination Processes and Transport Properties in GaInAsN/GaAs Quantum Wells

It is shown that the dramatic changes in threshold current density with changing active region growth temperature in 1.3mum GaInNAs-based lasers can be attributed almost entirely to changes in the defect related monomolecular recombination current in the optically active material. In addition, growt...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Fehse, R, Sweeney, S J, Adams, A R, O'Reilly, E P, McConville, D, Riechert, H, Geelhaar, L
Format: Tagungsbericht
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:It is shown that the dramatic changes in threshold current density with changing active region growth temperature in 1.3mum GaInNAs-based lasers can be attributed almost entirely to changes in the defect related monomolecular recombination current in the optically active material. In addition, growth temperature dependent changes in the QW morphology are shown to have a significant influence on the transport properties of the structure.
ISSN:0094-243X
DOI:10.1063/1.1994440