UPS of Boron-Sulfur Co-Doped, n-Type Diamond

The band structure of n-type diamond samples co-doped with boron and sulfur was studied using ultraviolet photoelectron spectroscopy (UPS) and Mott-Schottky analysis. The results show that the Fermi energy of the co-doped diamond is about 0.8-1.9 eV above the Fermi level of boron-doped diamond. The...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Electrochemical and solid-state letters 2004, Vol.7 (12), p.G331-G334
Hauptverfasser: Vaddiraju, Sreeram, Eaton-Magana, Sally, Chaney, John A., Sunkara, Mahendra K.
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The band structure of n-type diamond samples co-doped with boron and sulfur was studied using ultraviolet photoelectron spectroscopy (UPS) and Mott-Schottky analysis. The results show that the Fermi energy of the co-doped diamond is about 0.8-1.9 eV above the Fermi level of boron-doped diamond. The electron affinities of the samples ranged from -0.7 to - 1.4eV as evidenced by UPS. These results provide support for the presence of an acceptor impurity band within the bandgap region of the co-doped diamond samples.
ISSN:1099-0062
DOI:10.1149/1.1817985