On the growth and doping of Fe/Ti chalcogenide thin films
Formation of pyrite (FeS 2) thin films by sulphuration of metallic layers (Fe) and bilayers (Fe–Ti) has been investigated. An experimental technique, which allows the measurement of both the electrical resistance ( R) and the thermoelectric coefficient ( S) of the films during the sulphuration proce...
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| Veröffentlicht in: | Solar energy materials and solar cells 2005-05, Vol.87 (1), p.575-582 |
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| container_title | Solar energy materials and solar cells |
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| creator | Pascual, A. Diaz-Chao, P. Ferrer, I.J. Sánchez, C. Ares, J.R. |
| description | Formation of pyrite (FeS
2) thin films by sulphuration of metallic layers (Fe) and bilayers (Fe–Ti) has been investigated. An experimental technique, which allows the measurement of both the electrical resistance (
R) and the thermoelectric coefficient (
S) of the films during the sulphuration process (in situ), has been used. Sulphurated Fe–Ti bilayers appear to be n-type semiconductors in contrast with sulphurated Fe films, which are always p-type semiconductors. The change of conductivity type has been attributed to the doping effect of FeS
2 films by Ti. |
| doi_str_mv | 10.1016/j.solmat.2004.08.019 |
| format | Article |
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2) thin films by sulphuration of metallic layers (Fe) and bilayers (Fe–Ti) has been investigated. An experimental technique, which allows the measurement of both the electrical resistance (
R) and the thermoelectric coefficient (
S) of the films during the sulphuration process (in situ), has been used. Sulphurated Fe–Ti bilayers appear to be n-type semiconductors in contrast with sulphurated Fe films, which are always p-type semiconductors. The change of conductivity type has been attributed to the doping effect of FeS
2 films by Ti.</description><subject>Applied sciences</subject><subject>Doping</subject><subject>Energy</subject><subject>Exact sciences and technology</subject><subject>Metallic chalcogenide</subject><subject>Natural energy</subject><subject>Solar energy</subject><subject>Thin films</subject><issn>0927-0248</issn><issn>1879-3398</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2005</creationdate><recordtype>article</recordtype><recordid>eNp9kDtPwzAUhS0EEuXxDxi8wJb0Og_HXpBQRQGpUpcyW45907pK4mKnIP49Ka3ExnSX75yj-xFyxyBlwPh0m0bfdnpIM4AiBZECk2dkwkQlkzyX4pxMQGZVAlkhLslVjFsAyHheTIhc9nTYIF0H_zVsqO4ttX7n-jX1DZ3jdOWo2ejW-DX2zuLIup42ru3iDblodBvx9nSvyfv8eTV7TRbLl7fZ0yIxOa-GpEBbSdBomZambrThtsTclqUWBqDRWJalyGrNbVHXqLGWiKZmJWssr6uC59fk4di7C_5jj3FQnYsG21b36PdRZbLgIJkcweIImuBjDNioXXCdDt-KgTp4Ult19KQOnhQIBb-x-1O_jka3TdC9cfEvyytR8UyM3OORw_HZT4dBReOwN2hdQDMo693_Qz8ZsYDQ</recordid><startdate>20050501</startdate><enddate>20050501</enddate><creator>Pascual, A.</creator><creator>Diaz-Chao, P.</creator><creator>Ferrer, I.J.</creator><creator>Sánchez, C.</creator><creator>Ares, J.R.</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7TB</scope><scope>7U5</scope><scope>8FD</scope><scope>FR3</scope><scope>L7M</scope></search><sort><creationdate>20050501</creationdate><title>On the growth and doping of Fe/Ti chalcogenide thin films</title><author>Pascual, A. ; Diaz-Chao, P. ; Ferrer, I.J. ; Sánchez, C. ; Ares, J.R.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c367t-4ed790aed1a9cbfac6d5e3d55a8c00fae55582ba6d4bbeaeb9eecb151fd6b7463</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2005</creationdate><topic>Applied sciences</topic><topic>Doping</topic><topic>Energy</topic><topic>Exact sciences and technology</topic><topic>Metallic chalcogenide</topic><topic>Natural energy</topic><topic>Solar energy</topic><topic>Thin films</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Pascual, A.</creatorcontrib><creatorcontrib>Diaz-Chao, P.</creatorcontrib><creatorcontrib>Ferrer, I.J.</creatorcontrib><creatorcontrib>Sánchez, C.</creatorcontrib><creatorcontrib>Ares, J.R.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Mechanical & Transportation Engineering Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Engineering Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Solar energy materials and solar cells</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Pascual, A.</au><au>Diaz-Chao, P.</au><au>Ferrer, I.J.</au><au>Sánchez, C.</au><au>Ares, J.R.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>On the growth and doping of Fe/Ti chalcogenide thin films</atitle><jtitle>Solar energy materials and solar cells</jtitle><date>2005-05-01</date><risdate>2005</risdate><volume>87</volume><issue>1</issue><spage>575</spage><epage>582</epage><pages>575-582</pages><issn>0927-0248</issn><eissn>1879-3398</eissn><abstract>Formation of pyrite (FeS
2) thin films by sulphuration of metallic layers (Fe) and bilayers (Fe–Ti) has been investigated. An experimental technique, which allows the measurement of both the electrical resistance (
R) and the thermoelectric coefficient (
S) of the films during the sulphuration process (in situ), has been used. Sulphurated Fe–Ti bilayers appear to be n-type semiconductors in contrast with sulphurated Fe films, which are always p-type semiconductors. The change of conductivity type has been attributed to the doping effect of FeS
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| ispartof | Solar energy materials and solar cells, 2005-05, Vol.87 (1), p.575-582 |
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| language | eng |
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| source | Elsevier ScienceDirect Journals |
| subjects | Applied sciences Doping Energy Exact sciences and technology Metallic chalcogenide Natural energy Solar energy Thin films |
| title | On the growth and doping of Fe/Ti chalcogenide thin films |
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